Guiding charge injection in Schottky-barrier transistors through the spatial Fermi-level gradients of heterogeneous bimetallic systems
DC Field | Value | Language |
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dc.contributor.author | Kim, Min-Joong | - |
dc.contributor.author | Kim, Woo-Seok | - |
dc.contributor.author | Kim, Chang-Hyun | - |
dc.contributor.author | Kwon, Jin-Hyuk | - |
dc.contributor.author | Kim, Min-Hoi | - |
dc.date.accessioned | 2023-10-16T00:40:10Z | - |
dc.date.available | 2023-10-16T00:40:10Z | - |
dc.date.issued | 2023-09 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89350 | - |
dc.description.abstract | A heterogeneous bimetallic system (HBS), composed of two metallic thin films with inherently different Fermi levels, is potentially usable for the fine tuning of interfacial charge dynamics. Here, we propose a viable methodology for adjusting the turn-on voltage (Vto) of Schottky-barrier TFTs (SB-TFTs) based on new insights into the utilization of the physical properties of metallic materials. HBS-based thin films are demonstrated to provide a designable workfunction at a structural level. The acquired spatial gradients of the Fermi level, formed in the HBS, are considered a critical factor for achieving the structurally designable workfunction. During device testing, a significant correlation is observed between the Vto of SB-TFTs and the workfunction of their HBS-based source-drain (SD) electrodes. The ability to tailor the Vto property through the HBS strategy is attributed to the variation in workfunction of the HBS-based SD electrodes, which modulates the charge injection across the Schottky barrier. The Vto variation is extensively investigated by exploring various structural aspects of the HBS-based SD electrodes. Lastly, the HBS strategy enables clear off-states in both n-type and p-type SB-TFTs and their balanced electrical performances, through which a complementary inverter is successfully demonstrated. A heterogeneous bimetallic system, composed of two metallic thin films with inherently different Fermi levels, is potentially usable for the fine tuning of interfacial charge dynamics. | - |
dc.format.extent | 10 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Guiding charge injection in Schottky-barrier transistors through the spatial Fermi-level gradients of heterogeneous bimetallic systems | - |
dc.type | Article | - |
dc.identifier.wosid | 001072157300001 | - |
dc.identifier.doi | 10.1039/D3TC02561F | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.11, no.37, pp 12675 - 12684 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85170690386 | - |
dc.citation.endPage | 12684 | - |
dc.citation.startPage | 12675 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 11 | - |
dc.citation.number | 37 | - |
dc.type.docType | Article; Early Access | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | INVERTERS | - |
dc.subject.keywordPlus | JUNCTION | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | POWER | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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