Analytical modeling of organic permeable-base transistors based on geometrical parametrization
DC Field | Value | Language |
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dc.contributor.author | Joshi, Saurabh Sureda | - |
dc.contributor.author | Lim, Kyung-Geun | - |
dc.contributor.author | Kim, Chang-Hyun | - |
dc.date.accessioned | 2024-01-14T06:00:18Z | - |
dc.date.available | 2024-01-14T06:00:18Z | - |
dc.date.issued | 2023-11 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/90063 | - |
dc.description.abstract | Organic permeable-base transistors (OPBTs) are recently gaining increased attention due to their suitability for low-voltage flexible electronic circuits. However, the basic working mechanisms of these transistors are still not well understood because of the structural complexity of the devices. This aspect also implies a lack of physical and electrical model for robust interpretation and prediction of experimental results. This article proposes a new fully analytical description for current-voltage characteristics of vertical OPBTs, strategically employing simple yet universal geometrical parametrization scheme of a nanostructured base electrode. This functional model is also based on an equivalent-circuit approach that decouples field effect and bulk charge-transport properties of an OPBT. The proposed model is firmly validated by experimental data from a fullerene-based OPBT, which results in a set of materials and geometrical parameters. Furthermore, predictive capabilities of the model are demonstrated by focused parametric variations. Therefore, this model will serve as a practical tool for design, fabrication, and optimization of next-generation OPBTs. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Analytical modeling of organic permeable-base transistors based on geometrical parametrization | - |
dc.type | Article | - |
dc.identifier.wosid | 001080201100003 | - |
dc.identifier.doi | 10.1007/s40042-023-00930-7 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.83, no.9, pp 681 - 684 | - |
dc.identifier.kciid | ART003015107 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-85173947347 | - |
dc.citation.endPage | 684 | - |
dc.citation.startPage | 681 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 83 | - |
dc.citation.number | 9 | - |
dc.type.docType | Article | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | Organic transistors | - |
dc.subject.keywordAuthor | Analytical modeling | - |
dc.subject.keywordAuthor | Device physics | - |
dc.subject.keywordAuthor | Permeable base | - |
dc.subject.keywordAuthor | Equivalent circuit | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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