Analytical modeling of organic permeable-base transistors based on geometrical parametrization

Abstract

Organic permeable-base transistors (OPBTs) are recently gaining increased attention due to their suitability for low-voltage flexible electronic circuits. However, the basic working mechanisms of these transistors are still not well understood because of the structural complexity of the devices. This aspect also implies a lack of physical and electrical model for robust interpretation and prediction of experimental results. This article proposes a new fully analytical description for current-voltage characteristics of vertical OPBTs, strategically employing simple yet universal geometrical parametrization scheme of a nanostructured base electrode. This functional model is also based on an equivalent-circuit approach that decouples field effect and bulk charge-transport properties of an OPBT. The proposed model is firmly validated by experimental data from a fullerene-based OPBT, which results in a set of materials and geometrical parameters. Furthermore, predictive capabilities of the model are demonstrated by focused parametric variations. Therefore, this model will serve as a practical tool for design, fabrication, and optimization of next-generation OPBTs.