Impedance characterization of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene diodes: Addressing dielectric properties and trap effects
DC Field | Value | Language |
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dc.contributor.author | Cho, Hong-rae | - |
dc.contributor.author | Park, Joon Hyung | - |
dc.contributor.author | Kim, Somi | - |
dc.contributor.author | Mohanan, Kannan Udaya | - |
dc.contributor.author | Jung, Sungyeop | - |
dc.contributor.author | Kim, Chang-Hyun | - |
dc.date.accessioned | 2024-06-14T11:30:26Z | - |
dc.date.available | 2024-06-14T11:30:26Z | - |
dc.date.issued | 2024-05 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.issn | 1089-7550 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/91505 | - |
dc.description.abstract | Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is a widely used small-molecular p-type organic semiconductor. Despite the broad availability of high-performance DNTT transistors, there is a lack of investigation into other devices based on this semiconductor. In this study, rectifying diodes with DNTT as a single transport medium are fabricated and characterized. Realizing unipolar current rectification from asymmetric metal contacts, a number of physical and electrical properties of DNTT are made accessible. Current-voltage measurement, broad-band impedance spectroscopy, drift-diffusion simulation, and equivalent-circuit modeling are combined to quantify important parameters such as dielectric constant, trap energy, and lifetime. These results provide a practical reference for the design and optimization of diverse electronic devices incorporating DNTT. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(https://creativecommons.org/licenses/by/4.0/).https://doi.org/10.1063/5.0205973 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AIP Publishing | - |
dc.title | Impedance characterization of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene diodes: Addressing dielectric properties and trap effects | - |
dc.type | Article | - |
dc.identifier.wosid | 001215396000006 | - |
dc.identifier.doi | 10.1063/5.0205973 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.135, no.17 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.scopusid | 2-s2.0-85192228589 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 135 | - |
dc.citation.number | 17 | - |
dc.type.docType | Article | - |
dc.publisher.location | United States | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | STABILITY | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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