Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Seulki | - |
dc.contributor.author | Min, Seong-Ji | - |
dc.contributor.author | Cho, Myung-Yeon | - |
dc.contributor.author | Kim, Ik-Soo | - |
dc.contributor.author | Kim, So-Mang | - |
dc.contributor.author | Moon, Byung-Moo | - |
dc.contributor.author | Moon, Kyoung-Sook | - |
dc.contributor.author | Lee, Daeseok | - |
dc.contributor.author | Oh, Jong-Min | - |
dc.contributor.author | Koo, Sang-Mo | - |
dc.date.available | 2020-02-27T02:21:30Z | - |
dc.date.created | 2020-02-04 | - |
dc.date.issued | 2019-10-01 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/916 | - |
dc.description.abstract | Dense SiC layers with a thickness of 150 nm were prepared on n- and p-type Si substrates using aerosol deposition (AD) at room temperature. The contribution of electrons and holes to the conductivity in Ni/i-SiC/Si structures was investigated by conducting experiments involving the injection of carriers from silicon. Our results showed that the injection of carriers via light illumination and temperature experiments led to the generation of minority carriers, which contributed to the conductivity in the Ni/i-SiC/Si structures. The activation energies were found to be 0.8 eV and 0.4 eV for i-SiC/n-Si and i-SiC/p-Si, respectively. The conductivity of these Ni/i-SiC/Si structures was also affected by the trap-assisted tunneling process. The results indicate that the AD-prepared SiC/Si heterostructures could possibly be used to control bipolar conductivity and hold potential for application in temperature sensors and photovoltaics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.relation.isPartOf | CERAMICS INTERNATIONAL | - |
dc.subject | FILMS | - |
dc.subject | FABRICATION | - |
dc.subject | GROWTH | - |
dc.subject | POWDER | - |
dc.title | Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000482244200102 | - |
dc.identifier.doi | 10.1016/j.ceramint.2019.05.318 | - |
dc.identifier.bibliographicCitation | CERAMICS INTERNATIONAL, v.45, no.14, pp.17556 - 17561 | - |
dc.identifier.scopusid | 2-s2.0-85066394963 | - |
dc.citation.endPage | 17561 | - |
dc.citation.startPage | 17556 | - |
dc.citation.title | CERAMICS INTERNATIONAL | - |
dc.citation.volume | 45 | - |
dc.citation.number | 14 | - |
dc.contributor.affiliatedAuthor | Moon, Kyoung-Sook | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Silicon carbide | - |
dc.subject.keywordAuthor | Aerosol deposition | - |
dc.subject.keywordAuthor | Bipolar conductivity | - |
dc.subject.keywordAuthor | Heterostructure | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | POWDER | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114
COPYRIGHT 2020 Gachon University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.