ScholarWorks@Gachon: Hong, Seongin

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Hong, Seongin (홍성인)

BioNano Technology (Department of Physics)

Research Area: 반도체 물성 및 소자, 광센서, 뉴로모픽, Semiconductor physics and devices, Photosensors, Neuromorphic

Tel 031-750-5490
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transition metal dichalcogenides:5||tungsten diselenide:3||phototransistors:3||MoSe2:2||fieldeffect transistor:2||thinfilm transistor:2||fieldeffect transistors:2||transitionmetal dichalcogenides:2||O2 plasma treatment:2||chemical doping:2||Phototransistors:2||passivation:2||WSe2:2||2D materials:2||mobility:2||annealing process:2||Logic gates:1||Lowpower monitoring:1||Metal Halide:1||Micro LED:1||MoSe2 inverter:1||MoSe2, neuroplasticity:1||Molybdenum disulfide:1||Optical switches:1||Organic semiconductors:1||Oxide semiconductors:1||PEDOT:PSS:1||Photodetector:1||Photoplethysmogram sensors:1||Photosensitivity:1||Phototransistor:1||Poly(9, 9dinoctylfluorenyl2, 7diyl):1||Skinconformable electronics:1||Submicron:1||TMDs:1||Temperature stress:1||Transition metal dichalcogenides:1||Transition metal dichalcogenides (TMDs):1||Transitionmetal dichalcogenides:1||UV photodetectors:1||active pixel sensor:1||ambipolar inverter:1||amorphous oxide semiconductor:1||amorphous silicon:1||artificial synapses:1||building structural durability:1||colorvariable membranes:1||complementary inverter:1||digital inverter:1||electrohydrodynamic inkjet:1||flexible:1||gallium nitride:1||gate structure:1||graphene finger electrodes:1||high electron mobility transistors:1||hybrid devices:1||hybrid structure:1||hydrocarbons:1||hysteresis:1||interstitial effects:1||laser treatment:1||mesa structure:1||molecular reconfiguration:1||molybdenum diselenide:1||molybdenum diselenide (MoSe2):1||molybdenum disulfide:1||multi switching:1||multifunctional sensor arrays:1||multilayer MoS2:1||multilayer transition metal dichalcogenides (TMDs):1||ntype doping:1||negative capacitance:1||neuromorphic engineering:1||optoelectronics:1||optoelectrical synapses:1||optoelectronics:1||organic materials:1||ptype transistor:1||perovskite:1||photo transistor:1||photo triggered:1||photodetector:1||photosensitivity:1||phototransistor:1||photovoltaics:1||resistive water sensor:1||s method:1||selfisolation:1||sensory adaptation:1||solution combustion:1||stability test:1||steep slope:1||surface passivation:1||transition metal dichalcogenide:1||transparent:1||twodimensional materials:1||van der Waals stacking:1||visual memory:1||water ingress monitoring systems:1||water resistance:1||2D semiconductors:1||Al2O3 passivation:1||Ambipolarity:1||Antiambipolar:1||Bias stress:1||Cs3MnBr5:1||Current measurement:1||Cytop:1||Dark current:1||Diketopyrrolopyrrole polymers:1||Electrodes:1||Field effect transistors:1||Heterojunction:1||Heterostructure:1||Jain&apos:1||

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1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114

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