ScholarWorks@Gachon: Eom, Kitae

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Eom, Kitae (엄기태)

반도체대학 (반도체·전자공학부)

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oxygen vacancies:2||Lowfrequency noise:2||2D electron gas:2||Correlated oxides:1||Electron Killer:1||LAO/STO:1||LaAlO 3/SrTiO 3 heterostructures:1||LaAlO3:1||LaAlO3/SrTiO3:1||Laser Fluence:1||Low Symmetry:1||Oxide heterostructures:1||Oxygen vacancies:1||Persistent photoconductivity:1||Photomodulation:1||Resistive switching:1||Schottky Defect:1||Spectral analyses:1||SrTiO3:1||SrTiO3 heterostructures:1||Stoichiometric:1||Strain:1||Twodimensional electron gases:1||VISNIR:1||alkalineearth stannate:1||atomic scale:1||chemical doping:1||collective control:1||complex oxide heterostructures:1||electron waveguides:1||electronlattice and orbital coupling:1||filamentfree:1||graphene:1||hot electrons:1||lowfrequencynoise:1||metalinsulator transition:1||oxide:1||oxide heterostructures:1||oxygen vacancy:1||persistent photoconductivity:1||plasmons:1||polaron hopping conduction:1||quantum transport:1||quasi1D transport:1||resistive switching:1||room temperature high mobility:1||terahertz spectroscopy:1||thermopower:1||transition metal oxides:1||transparent conducting oxide:1||tunneling devices:1||tunneling photocurrent:1||twodimensionalelectron gases:1||ultrathin film:1||(Ba, Sr)TiO3 Thin Films:1||variablerange hopping:1||2dimensional electron gas:1||Charge trapping:1||

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1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114

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