ScholarWorks@Gachon: Cho, Eou Sik

Detailed Information

Cho, Eou Sik (조의식)

반도체대학(학부) (Department of Electronic Engineering)

Research Area

Tel 031-750-5297
Homepage

ResearcherID ORCiD Scopus Google Scholar ID ResearchGate

Keyword

ITO/Ag/ITO:7||Nd:YVO4 Laser:6||Transparent conductive oxide:5||Inline sputtering:5||Nd:YVO4 laser:5||Indium tin oxide (ITO):4||Sputtering:4||ITO:4||AluminumDoped Zinc Oxide (AZO):4||Al2O3:4||Tungsten Disulfide (WS2):4||Thin Film Encapsulation (TFE):3||Molybdenum Disulfide (MoS2):3||NPB:3||Glass:3||Polyethylene Terephthalate (PET):3||SodaLime Glass:3||Organic light emitting diodes:3||Rapid Thermal Processing (RTP):3||Alq3:3||Organic lightemitting diode (OLED):3||Top emission organic lightemitting diode (TEOLED):3||Mg:Ag:3||ZnO:3||Atomic Layer Depositon (ALD):3||Fullwave simulation:3||Indium Tin Oxide (ITO):3||Graphene:3||OLED:3||Tunneling fieldeffect transistor:2||DC sputtering:2||ITO/MeshAg/ITO multiple layers:2||Molybdenum disulfide (MoS2):2||Deposition rate:2||Atomic layer deposition:2||Field emission:2||XPS:2||3D FDTD method:2||LiF:2||Zinc oxide (ZnO):2||Stacked elemental layer (SEL):2||aIGZO:2||PulsedDC Sputtering:2||PulsedDC sputtering:2||Subthreshold swing:2||Indium gallium zinc oxide (IGZO):2||QDOLED:2||RF Sputtering:2||Hole transport layer (HTL):2||byproduct:2||Thermal Conductivity:2||cathode:2||Emission material layer (EML):2||RadioFrequency:2||Raman Spectroscopy:2||Raman Spectrum:2||Thin film encapsulation:2||Mg : Ag:2||Rapid Thermal Annealing (RTA):2||Rapid thermal process (RTP):2||DC Sputtering:2||transmittance:2||Laser ablation:2||Heterojunction:2||PET:2||Tunneling FieldEffect Transistor:2||FDTD simulation:1||Figure of merit (FOM):1||Flexible Substrate:1||Forward/reverse side:1||Frequency:1||Frequency filter:1||Frequency response:1||Ga)Se2 (CIGS):1||GaN:1||Gallium nitride:1||Gate Dielectric:1||Gateallaround:1||Gateallaround (GAA):1||Grain Size:1||HF etching:1||Hair Growth:1||Hall measurement:1||Heterogatedielectric:1||Heterojunction Structure:1||Heteromaterial Gate:1||HfO2:1||High speed:1||HighSpeed:1||Highk Dielectric:1||Highk dielectric:1||Hydrogenated amorphous silicon thin film transistor (aSi:H TFT):1||Hysteresis:1||ITO anode:1||ITOAgITO:1||ITOGraphene:1||ITOgrapheneITO:1||ITO/Ag/ITO multilayer:1||ITO/IGZO energy band structure:1||ITO/meshAg/ITO multiple layer:1||Inline pulsed DC sputtering:1||Inline pulsedDC Magnetron sputtering:1||In2S3 buffer layers:1||Indium tin oxide electrode:1||Indiumtinoxide (ITO):1||Integrateandfire (I &:1||Integrateandfire neuron circuit:1||Intrinsic zinc oxide (iZnO):1||Junctionless:1||Laser Ablation:1||Laser Beam Direction:1||Laser Beam Dispersion:1||Laser Patterning:1||Laser direct ablation:1||Laser direct etching:1||Laser direct patterning:1||Laser etching:1||Laser pulse energy:1||Leakage current:1||Leaky integrate and fire:1||Linearity:1||LiquidPhase Exfoliation:1||Low Standby Power:1||Low Temperature:1||Low Thermal Budget:1||Low gate leakage current:1||Low operating power:1||LowFrequency Noise:1||Mesh Pattern:1||Mesh structure:1||MeshAg:1||Metaloxidesemiconductor fieldeffect transistor:1||MgCp2 precursor:1||MgO:1||Micro Cavity effect:1||MicroCavity effect:1||Microwave plasma chemical vapour deposition:1||Mixedmode simulation:1||Mo mask:1||Molybdenum Disulfide:1||Multilayers:1||Nanowire:1||Nd:YVO4:1||NearInfrared:1||Niobium Oxide (Nb2O5):1||Niobium oxide(Nb2O5):1||Normallyoff:1||O2/Ar Gas Ratio:1||O2/Ar gas ratio:1||OLED driving circuit:1||OPDI:1||OTFT:1||OffState Channel Resistance:1||Open ratio:1||Optical band gap:1||Optical properties:1||Organic Buffer Layer:1||Overlap Rate:1||Overlapping rate:1||Oxygen Gas Ratio:1||Oxygen ion beam assisted deposition:1||PC:1||PC (polycarbonate):1||PCBM:1||PET substrate:1||Parameter Extraction:1||Photocurrent:1||Photon energy spectral characteristics:1||Photonic Curing:1||Photopolymer:1||Photothermal energy:1||Plastic substrate:1||Polyethylene terephthalate (PET):1||Polymeric Gate Dielectric Layer:1||Polymeric insulator:1||Pressure:1||Pulse Duty Ratio:1||Pulsed DC power:1||Qswitched Nd:YVO4 laser:1||QD:1||RF Sputtering Powers:1||RF sputtering:1||RF sputtering power:1||RTA temperature:1||Radio Frequency:1||RadioFrequency (RF):1||Radiofrequency (RF):1||Raman spectra:1||Raman spectroscopy:1||Rapid thermal annealing (RTA):1||RapidThermalProcessing Temperature:1||Recessedgate:1||Repetition rate:1||Resistive Touch Screen Panel:1||Resistivetype touch panel:1||Reverse Voltage Time:1||Reversed Pulse Time:1||SPICE:1||Sapphire Substrate:1||Scan speed:1||Schottky Barrier:1||Selective Etching:1||Selective laser ablation:1||Selenization:1||Selfannealing:1||SemiTransparent:1||Series Resistance:1||Silicon Nanowire (SNW):1||SmallSignal Modeling:1||SodaLime Glass.:1||Software lockin amplifier:1||Sputtering Power:1||Sputtering Time:1||Sputtering power:1||Subgap Density of States:1||Substrate temperature:1||TCAD:1||TCAD Simulation:1||TCE (transparent composite electrode):1||TCO:1||TCO (transparent conductive oxide):1||TEOLED:1||Temperature distribution:1||Temperatures:1||Thermal Energy:1||Thermal conductivity:1||Thermal evaporation process:1||Thermalenergy transfer:1||Thickness:1||Thickness Effect:1||Thin Film Transistor:1||Thin films:1||ThinFilm Transistors:1||Thinfilm transistor:1||Threshold Voltage Shift:1||TiNi:1||Top emission organic light emitting diode(OLED):1||Transition Metal Dichalcogenide:1||Transmittance:1||Transparent Conductive Electrode (TCE):1||Transparent Organic LightEmitting Diode (TOLED):1||Transparent and Flexible Electronics:1||Transparent conductive oxide electrode:1||Transparent electrode:1||Tungsten disulfide (WS2):1||Tunneling fieldeffect transistor (TFET):1||UPS:1||UV pulsed laser annealing:1||Ultra shallow LDD junction:1||Volcano shaped gated SiFEAs:1||WVTR:1||Wave optics:1||Wavelengthtunable:1||Wearable Photomedicine:1||Wet etch:1||Work function:1||Xe flash lamp:1||Xeflash lamp annealing (XeFLA):1||Zinc oxide:1||Zinc oxide(ZNO):1||Zinc oxide(ZnO):1||ZnO Transistor:1||ZrO2:1||aIGZO TFT:1||acoustic properties:1||aluminum oxide (Al2O3):1||aluminumdoped zinc oxide:1||aluminumdoped zinc oxide (AZO):1||annealing:1||artificial neuron:1||atomic force microscopy (AFM):1||atomic layer deposition:1||atomic layer deposition (ALD):1||beam direction:1||cPVP organic buffer layer:1||cavity effect:1||charge trapping:1||chemical bath deposition:1||circuit design:1||circuit simulation:1||colortuning:1||conduction band offset:1||conductivity:1||current and capacitance models:1||current density:1||dielectric material:1||display:1||dropcasting:1||energy band diagram:1||external quantum efficiency:1||fidelity:1||field extended source/drain:1||flexible:1||flexible electronics:1||fullwave simulation:1||graphene:1||graphene oxidepolyethyleneimine (GOPEI) foam:1||growth rate:1||hardwareoriented spiking neural network (SNN):1||heterojunction:1||highfrequency noise:1||hysteresis:1||inline DC sputtering:1||indiumtin oxide(ITO):1||ionization potential energy:1||laser beam energy:1||light emission patterns:1||light extraction efficiency:1||lightemitting diode:1||linearity:1||lithium fluoride(LiF):1||local interconnection:1||low frequency noise:1||luminance:1||magnetron sputtering:1||membrane capacitor:1||memristor:1||mesh structure:1||nano electro mechanical device:1||neuron circuit:1||niobium oxide:1||operational transconductance amplifier (OTA):1||oxygen flow rate:1||oxygen vacancy:1||ptype copper oxide (Cu2O) thinfilm transistors (TFTs):1||parallelstacked OLED:1||patterned:1||pentacene:1||phototherapeutics:1||plasma jet:1||polisher:1||porous structure:1||postannealing:1||pulse repetition number:1||pulsedDC sputtering:1||rapid thermal annealing (RTA):1||rapid thermal processing (RTP):1||resistance:1||resistive touch panel:1||reverse pulse time:1||sapphire substrate:1||scanning speed:1||selective annealing:1||selective surface treatments:1||selfcascode:1||shadow mask:1||shunt capacitor:1||simulation:1||small molecules:1||solid phase diffusion:1||sound absorption:1||spiking neural network (SNN):1||stability:1||subgap density of states:1||surface roughness:1||textile OLED:1||thinfilm transistor (TFT):1||thinfilm transistors:1||thinfilm transistors (TFTs):1||transparent:1||transparent OLED:1||transparent electrode:1||transparent electronics:1||trap state creation:1||triangletype LED:1||vacuum processing:1||wearable display:1||wearable optoelectronics:1||white:1||whitelight:1||마이크로웨이브 플라즈마 화학기상증착:1||비소 이온 주입:1||비정질 탄소 박막:1||산소 이온 빔 보조 증착:1||식각 효과:1||알루미늄 산화막:1||자동 어닐링:1||전계 방출:1||정전 용량:1||3D simulation:1||AIGZO TFT:1||AZO:1||AZO thin films:1||AZOAgAZO:1||AZO/Ag/AZO:1||Adhesion to CDS:1||Ag:1||Ag thickness:1||AlO:1||Aluminum oxide:1||Amorphous InGaZnO Transistor:1||Amorphous carbon film:1||Amorphous indiumgalliumzincoxide (aIGZO):1||AmorphousIndium Gallium Zinc Oxide:1||Amorphousindium gallium zinc oxide (aIGZO):1||Ar plasma treatment:1||Ar purge gas:1||Arsenic implantation:1||Asymmetric junctions:1||Atomic layer deposition (ALD):1||Atomic ratio:1||Backlight:1||Bandgap voltage reference:1||Biasstressinduced instability:1||Binding energy:1||CPVA Organic Buffer Layer:1||C60:1||CIGS solar cell:1||CIS solar cell:1||Capacitance:1||Capping layer(CPL):1||Cathode:1||CdS:1||Cell viability assay:1||Channel:1||Chemical vapor deposition (CVD):1||Coefficient of expansion(CTE):1||Coefficient of thermal expansion (CTE):1||Cold trap:1||Cu(In:1||Cu(In,Ga)Se2 (CIGS) thin film solar cell:1||Cu(In,Ga)Se2 (CIGS) thin film solar cells:1||Cu(In,Ga)Se2 solar cell:1||CuIn1xGaxSe2 (CIGS) Solar Cells:1||Current ratio:1||Cutoff Frequency:1||DAQ:1||DC pulsed sputtering:1||Device Simulation:1||Device simulator:1||Direct Patterning:1||Direct current(DC) sputtering:1||Direct etching:1||Drain underlap:1||Dry etch:1||Duty Ratio:1||Electric cellsubstrate impedance sensing:1||Electrode:1||Electron microscopy (STEM TEM and SEM):1||Etching effect:1||Extraction Ratio:1||F):1||F.O.M:1||FDTD:1||

RSS_1.0 RSS_2.0 ATOM_1.0

1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Keyword

BROWSE