ScholarWorks@Gachon: Kwon, Sang Jik

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Kwon, Sang Jik (권상직)

반도체대학 (반도체·전자공학부)

Research Area: 반도체 디스플레이, 전자공학

Tel 031-750-5319
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ITO/Ag/ITO:7||Nd:YVO4 Laser:6||Inline sputtering:5||ITO:5||Sputtering:5||Transparent conductive oxide:5||Nd:YVO4 laser:5||Indium tin oxide (ITO):4||Tungsten Disulfide (WS2):4||AluminumDoped Zinc Oxide (AZO):4||ZnO:3||Glass:3||SodaLime Glass:3||Top emission organic lightemitting diode (TEOLED):3||Molybdenum Disulfide (MoS2):3||Alq3:3||Indium Tin Oxide (ITO):3||NPB:3||Polyethylene Terephthalate (PET):3||Rapid Thermal Processing (RTP):3||Organic light emitting diodes:3||Fullwave simulation:3||Organic lightemitting diode (OLED):3||Graphene:3||Deposition rate:2||PulsedDC Sputtering:2||PulsedDC sputtering:2||Thermal Conductivity:2||Al2O3:2||RF Sputtering:2||Cu(In,Ga)Se2 (CIGS) thin film solar cells:2||LiF:2||ITO/MeshAg/ITO multiple layers:2||Raman Spectroscopy:2||3D FDTD method:2||Raman Spectrum:2||Thin film encapsulation:2||Rapid Thermal Annealing (RTA):2||Optical properties:2||Rapid thermal process (RTP):2||Ag:2||Field emission:2||Mg : Ag:2||Vacuum sealing:2||Indium gallium zinc oxide (IGZO):2||Hole transport layer (HTL):2||XPS:2||DC Sputtering:2||PET:2||Zinc oxide (ZnO):2||Atomic layer deposition:2||Emission material layer (EML):2||aIGZO:2||Molybdenum disulfide (MoS2):2||DC sputtering:2||Stacked elemental layer (SEL):2||Laser ablation:2||transmittance:2||FDTD simulation:1||FED:1||Figure of merit (FOM):1||Flexible Substrate:1||Forward/reverse side:1||Frequency:1||Frequency filter:1||Frit:1||Ga)Se2 (CIGS):1||Gate Dielectric:1||Grain Size:1||HF etching:1||Hall measurement:1||High throughput:1||Hydrogenated amorphous silicon thin film transistor (aSi:H TFT):1||Hysteresis:1||ITO anode:1||ITOAgITO:1||ITOGraphene:1||ITOgrapheneITO:1||ITO/Ag/ITO multilayer:1||ITO/Ag/iZnO:1||ITO/IGZO energy band structure:1||ITO/meshAg/ITO multiple layer:1||Inline pulsed DC sputtering:1||Inline pulsedDC Magnetron sputtering:1||Inline pulsedDC sputtering:1||In2S3 buffer layers:1||Indiumtinoxide (ITO):1||Intrinsic zinc oxide (iZnO):1||Laser Ablation:1||Laser Beam Direction:1||Laser Beam Dispersion:1||Laser Patterning:1||Laser direct ablation:1||Laser direct etching:1||Laser direct patterning:1||Laser etching:1||Laser pulse energy:1||Leakage current:1||Linearity:1||LiquidPhase Exfoliation:1||Low Temperature:1||Low gate leakage current:1||Mesh structure:1||MeshAg:1||Mg:Ag:1||MgCp2 precursor:1||MgO:1||MgO evaporation:1||Micro Cavity effect:1||MicroCavity effect:1||Microwave plasma chemical vapour deposition:1||Mo mask:1||Molybdenum Disulfide:1||Multilayers:1||Nd:YVO4:1||Niobium Oxide (Nb2O5):1||Niobium oxide(Nb2O5):1||O2/Ar Gas Ratio:1||O2/Ar gas ratio:1||OLED:1||OLED driving circuit:1||OPDI:1||OTFT:1||Open ratio:1||Optical band gap:1||Organic Buffer Layer:1||Overlap Rate:1||Overlapping rate:1||Oxygen Gas Ratio:1||Oxygen concentration:1||Oxygen ion beam assisted deposition:1||PC:1||PC (polycarbonate):1||PCBM:1||PDP:1||PET substrate:1||Photocurrent:1||Photon energy spectral characteristics:1||Photopolymer:1||Photothermal energy:1||Plasma display panel:1||Plastic substrate:1||Polyethylene terephthalate (PET):1||Polymeric Gate Dielectric Layer:1||Polymeric insulator:1||Pressure:1||Pulse Duty Ratio:1||Pulsed DC power:1||Qswitched Nd:YVO4 laser:1||RF Sputtering Powers:1||RF sputtering:1||RF sputtering power:1||RTA temperature:1||Raman spectra:1||Raman spectroscopy:1||Rapid thermal annealing (RTA):1||RapidThermalProcessing Temperature:1||Repetition rate:1||Resistive Touch Screen Panel:1||Resistivetype touch panel:1||Reverse Voltage Time:1||Reversed Pulse Time:1||Sapphire Substrate:1||Scan speed:1||Schottky Barrier:1||Selective Etching:1||Selective laser ablation:1||Selenization:1||Selfannealing:1||SemiTransparent:1||Sheet Resistance:1||SodaLime Glass.:1||Solarcell:1||Solution concentration:1||Sputtering Power:1||Sputtering Time:1||Sputtering power:1||Substrate temperature:1||TAC time reduction:1||TCE (transparent composite electrode):1||TCO:1||TCO (transparent conductive oxide):1||TEOLED:1||Temperature distribution:1||Temperatures:1||Thermal Energy:1||Thermal conductivity:1||Thermal evaporation process:1||Thermalenergy transfer:1||Thickness:1||Thickness Effect:1||Thin Film Encapsulation (TFE):1||Thin Film Transistor:1||Thin films:1||ThinFilm Transistors:1||Thinfilm transistor:1||Threshold Voltage Shift:1||Top emission organic light emitting diode(OLED):1||Transition Metal Dichalcogenide:1||Transparent Conductive Electrode (TCE):1||Transparent conductive oxide electrode:1||Transparent electrode:1||Tungsten disulfide (WS2):1||UPS:1||UV pulsed laser annealing:1||Ultra shallow LDD junction:1||Volcano shaped gated SiFEAs:1||WVTR:1||Wave optics:1||Work function:1||Xe flash lamp:1||Zinc oxide:1||Zinc oxide(ZNO):1||Zinc oxide(ZnO):1||ZnO Transistor:1||ZnS:1||ZnS thin films:1||aIGZO TFT:1||aluminum oxide (Al2O3):1||aluminumdoped zinc oxide:1||aluminumdoped zinc oxide (AZO):1||annealing:1||atomic force microscopy (AFM):1||atomic layer deposition:1||atomic layer deposition (ALD):1||beam direction:1||cPVP organic buffer layer:1||cathode:1||cavity effect:1||chemical bath deposition:1||conduction band offset:1||conductivity:1||current density:1||currentvoltage characteristics:1||dielectric material:1||dropcasting:1||energy band diagram:1||field extended source/drain:1||flexible electronics:1||fullwave simulation:1||growth rate:1||heterojunction:1||hysteresis:1||inline DC sputtering:1||indiumtin oxide(ITO):1||ionization potential energy:1||laser beam energy:1||light extraction efficiency:1||linearity:1||lithium fluoride(LiF):1||local interconnection:1||low frequency noise:1||luminance:1||magnetron sputtering:1||mesh structure:1||niobium oxide:1||oxygen flow rate:1||oxygen vacancy:1||pentacene:1||plasma jet:1||polisher:1||postannealing:1||potassium:1||pulse repetition number:1||pulsedDC sputtering:1||rapid thermal annealing (RTA):1||rapid thermal processing (RTP):1||resistance:1||resistive touch panel:1||reverse pulse time:1||sapphire substrate:1||scanning speed:1||selective annealing:1||selective surface treatments:1||selfcascode:1||small molecules:1||solar cell:1||solid phase diffusion:1||surface roughness:1||thin films:1||thinfilm transistor (TFT):1||thinfilm transistors:1||transparent OLED:1||transparent electrode:1||transparent electronics:1||vacuum processing:1||마이크로웨이브 플라즈마 화학기상증착:1||비소 이온 주입:1||비정질 탄소 박막:1||산소 이온 빔 보조 증착:1||식각 효과:1||알루미늄 산화막:1||자동 어닐링:1||전계 방출:1||정전 용량:1||3D simulation:1||AZO:1||AZO thin films:1||AZO/Ag/AZO:1||Adhesion to CDS:1||Ag thickness:1||Aldoped ZnO (AZO):1||Aluminum oxide:1||Amorphous InGaZnO Transistor:1||Amorphous carbon film:1||AmorphousIndium Gallium Zinc Oxide:1||Amorphousindium gallium zinc oxide (aIGZO):1||Ar plasma treatment:1||Ar purge gas:1||Arsenic implantation:1||Atomic Layer Depositon (ALD):1||Atomic layer deposition (ALD):1||Atomic ratio:1||Backlight:1||Band gap:1||Bandgap voltage reference:1||Binding energy:1||Buffer layer:1||CPVA Organic Buffer Layer:1||C60:1||CBD:1||CIGS:1||CIGS solar cell:1||CIS solar cell:1||Capacitance:1||Capping layer(CPL):1||Cathode:1||Cdfree:1||CdS:1||Channel:1||Chemical bath deposition (CBD):1||Chemical vapor deposition (CVD):1||Coefficient of expansion(CTE):1||Coefficient of thermal expansion (CTE):1||Cu(In:1||Cu(In Ga)Se2 solar cell:1||Cu(In,Ga)Se2 (CIGS) thin film solar cell:1||Cu(In,Ga)Se2 solar cell:1||CuIn1xGaxSe2 (CIGS) Solar Cells:1||CuInSe2 (CIS):1||DC pulsed sputtering:1||Direct Patterning:1||Direct current(DC) sputtering:1||Direct etching:1||Dry etch:1||Duty Ratio:1||Electrode:1||Electron microscopy (STEM TEM and SEM):1||Etching effect:1||Extraction Ratio:1||F.O.M:1||FDTD:1||

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