ScholarWorks@Gachon: Kim, Kyung Hwan

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Kim, Kyung Hwan (김경환)

College of IT Convergence (Department of Electrical Engineering)

Research Area: 전기공학, 전기공학

Tel 031-750-5348
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TiO2:13||FTS:12||DSSC:9||ITO:8||DSSCs:8||AZO:5||Facing targets sputtering:5||GAZO:5||OLED:5||TiO2 nanotube:5||Sputtering:5||phosphor:4||photodetector:4||heterojunction:3||GZO:3||TCO:3||ZnO:3||facing target sputtering:3||Multilayer:3||Cu2O:3||TiCl4:3||RF magnetron sputtering:3||sputtering:3||Film:3||thin film:3||oxygen:3||transparent electrode:3||TiO2 nanoparticle:3||working pressure:3||Phosphor:3||AgNWs:2||Facing Targets Sputtering System:2||luminescence:2||metal oxide semiconductor:2||GaAl doped ZnO:2||Gadoped ZnO:2||nanoparticle:2||Photoluminescence:2||Facing target sputtering:2||Thin film:2||Solar Cell:2||photovoltaic performance:2||postannealing:2||Aluminumdoped zinc oxide:2||Process pressure:2||Solution process:2||selfpowered:2||silicon carbide:2||Transparent conducting oxide:2||Optical properties:2||Transparent electrode:2||solution process:2||electron recombination:2||facing targets sputtering system:2||Ag2O/betaGa2O3:2||WO3:2||Graphene:1||HIL:1||Heterojunction:1||Hybrid:1||Hydrogen production:1||Hydrophilicity:1||Hydrothermal method:1||ITO/GaAl doped ZnO bilayer:1||IZO:1||IZTO:1||InGaZnO:1||Infrared:1||Interface Engineering:1||Intermediate GAZO thin film layer:1||Ionic Conductivity:1||Junction Barrier Schottky:1||Layer double hydroxide:1||Low voltage:1||LowDamaging:1||Luminescence:1||Magnetic:1||Magnetic field:1||Mesoporous SDC:1||Microbolometer:1||Microemulsion:1||Microstructure:1||Mo:1||MoO3:1||Molybdenum:1||Multilayers:1||Nanocomposites:1||Nanocrystal:1||Nanomaterials:1||Nanoparticle:1||Nonsubject educational program modeling:1||Optical property:1||Oxidation:1||Oxide Semiconductor:1||Oxygen:1||Oxygen gas:1||Oxynitride phosphor:1||PECVD:1||PSCs:1||Passivating Layer:1||Photofenton reaction:1||Photocatalytic Effect:1||Photoelectrode:1||Photoinduced:1||Plasma:1||Plasma Treatment:1||Polyethersulfone:1||Postannealing:1||Postannealing treatment:1||Powders: chemical preparation:1||Quaternary Target:1||RF 마그네트론 스퍼터링:1||RFmagnetron sputter:1||RTA:1||Rapid thermal annealing:1||Reactive sputtering:1||Schottky Diode Parameters:1||Schottky Metal Layer:1||Schottky barrier diode:1||Schottky contacts:1||Schottky diode:1||Schottky diode parameter:1||Semiconductor:1||SiC:1||SilicaEncapsulation:1||Silicate:1||Silicon carbide:1||Silver Nanowire:1||Silver nanowire:1||Sol–gel:1||Solar Cells:1||Solar cell:1||Solid Oxide Fuel Cells:1||SolutionProcess:1||SpinCoating:1||SpinSpray Method:1||Spinspray:1||Sputter:1||Sputtering deposition:1||Sputtering.:1||Stimulation:1||Substrate Temperature:1||Substrate temperature:1||Surfactant:1||TCR:1||TFT:1||TPD:1||Thermal Treatment:1||Thermal treatment:1||Thermoinduced:1||Thin Film:1||Thin film transistor:1||Thin films:1||ThinFilm Transistor:1||TiCl4 PostTreatment:1||TiO2 nanotube array:1||TiO2 nanowire:1||Titanium Tetrachloride:1||Transparent Conductive Thin Film:1||Transparent conductivity oxide:1||Triple Phase Boundary:1||Triple multilayer:1||Tungsten oxide:1||UV:1||UV irradiation:1||Uncooled IR Detector:1||Vacuum Heat treatment:1||White LEDs:1||Words:1||XRay Diffraction:1||Xray diffraction:1||Y2O3:Er3+:1||Y3Al5O12:Ce3+:1||YAG:Ce:1||YAG:Ce3+:1||Yb3+:1||Zinc Oxide:1||ZnAl:1||ZnGa2O4:Mn2+:1||ZnO passivating layer:1||ZnO:Ga:1||ZnSe:1||aIGZO:1||anodic oxidation:1||aqueous chemistry:1||betaGa2O3:1||builtin potential:1||concentration:1||copper oxide:1||crystallinity:1||deep ultraviolet:1||deep ultraviolet (DUV):1||diode:1||distribution:1||dyesensitised solar cell:1||dyesensitised solar cells:1||dyesensitized solar cells:1||electrochromic:1||electron injection:1||facing targets sputtering:1||facingtarget sputtering:1||flexible:1||grain growth:1||heterotarget:1||high pressure annealing:1||laser annealing:1||lowdamage:1||magnetic field:1||mixture:1||molybdenum:1||multilayer:1||nanotube:1||nickel oxide:1||numerical simulation:1||optical properties:1||optoelectronic materials:1||oxygen flow ratio:1||oxygen partial pressure ratio:1||pn junction:1||ptype:1||passivatinglayer hydrothermal method:1||phosphormixed DSSC:1||photocatalytic:1||photoelectrode:1||porous materials:1||radio frequency sputtering:1||rapid thermal annealing:1||reactive sputtering:1||saving ITO material:1||silver nanowire:1||solar cell:1||solar cells:1||solarblind ultraviolet:1||spincoating:1||stability:1||substrate temperature:1||thermal treatment:1||thin films transistors:1||thinfilm transistor:1||tungsten oxide:1||various thicknesses:1||wafer thinning:1||zinc oxide:1||βGa2O3:1||공정압력:1||2D:1||투명전도막:1||4HSiC:1||AZO/Ag/AZO:1||AZO/Cu/AZO:1||Ag:1||Ag film thickness:1||Ag2O:1||Ag:AZO:1||AgNW ZnO Bilayer:1||Al2O3:1||Al2O3doped:1||Alq3:1||Amorphous silicon:1||Anodic oxidation:1||Beyond Graphene:1||CIGS Absorber Layers:1||Capstone design:1||Cathode:1||CeO2:1||Chemical Synthesis:1||Cosputtered electrode:1||Composite layer:1||Conductivity:1||Conversion:1||CopperPhtalocyanine:1||Creative experience:1||Crystallization:1||CuO:1||CuPc:1||Cuprous oxide:1||DFTS:1||DUV:1||Deposition:1||Detectivity:1||DyeSensitized Solar Cell (DSSC):1||Electrical properties:1||Electrochromic:1||Electron recombination:1||Electronic materials:1||Engineering education:1||FTS System:1||FTS system:1||Facing Targets Sputtering:1||Facing Targets sputtering:1||Facing target sputtering system:1||Facingtargets sputtering:1||Fe2O3doping:1||FeOOH:1||Films:1||GAZO/Ag/GAZO:1||GAZO/Ag/GAZO/Ag/GAZO multilayer:1||Ga doped zinc oxide:1||Ga도핑된 ZnO:1||Ga2O3:1||Galliumdoped zinc oxide:1||Grain size:1||

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