ScholarWorks@Gachon: Lim, Jae Hong

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Lim, Jae Hong (임재홍)

Engineering (Department of Materials Science & Engineering)

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Tel 031-750-5880
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Thermoelectric:7||thermoelectric:5||electrodeposition:5||Thermoelectrics:3||PSS:2||thermoelectrics:2||Effective mass:2||Lattice thermal conductivity:2||Electrodeposition:2||Bi2Te3:2||carrier filtering effect:2||PEDOT:2||effective mass:2||Carrier tuning:1||Catalytic combustion:1||Chemicapacitor:1||Chemiresistor:1||Coherent interface:1||Crystal orientation:1||Cu incorporation:1||Cu intercalation:1||FeCo nanowires:1||FeS2 foam:1||HalfHeusler:1||Hexane:1||Hfdoping:1||Hybrid nanocomposite:1||Hydrogen:1||Hydrogen sensor:1||Inclusion:1||Inorganic/organic nanocomposite:1||Iodine:1||Lead telluride:1||Meltspinning:1||Nanocomposite:1||Nanocrystalline:1||Nanoparticle:1||Nondegenerate mobility:1||Pd doping:1||Phonon scattering:1||Pt:1||Ptdecorated graphene sheet:1||Sbrich nanoprecipitate:1||Sb2Te3:1||Se wires array:1||Segregated structure:1||Semicoherent interface:1||Singlewalled carbon nanotube:1||Singlewalled carbon nanotubes:1||Sm2Co17/FeCo nanocomposite magnets:1||Submicron grain:1||Surface modification:1||Tellurium nanowire:1||Thermal conductivity:1||Thin film:1||TiNiSn:1||Weighted mobility:1||bipolar:1||bipolar thermal conductivity:1||canning package:1||capacitive sensor:1||carrier scattering:1||cathode frame:1||chloride ion sensor:1||chronopotentiometry:1||cold pressing:1||compositional control:1||copper telluride:1||coreshell nanomagnet:1||defect engineering:1||diatomite ceramic membrane:1||edge slope:1||electroless plating:1||electroplating:1||exchangecoupling effect:1||galvanic displacement:1||galvanic displacement reaction:1||geltype internal electrolyte:1||hybrid thermoelectrics:1||kerf loss:1||metal foam:1||ntype Bi2Te3:1||nanoengineering:1||nanotube:1||nanowire:1||permanent magnet:1||phonon scattering:1||powder processing:1||preannealing:1||pulse current:1||recycled waste scraps:1||reinforced concrete structure:1||rubber sockets:1||seed layer:1||selenium:1||semiconductor test sockets:1||sensor:1||shape tuning:1||spalling:1||stressor layer:1||surface modification:1||te nanowire:1||tetragonal:1||thermal battery:1||thermal extrusion:1||thermal sulfidation:1||throughsiliconvia (TSV):1||topotactic reaction:1||ultrathin silicon wafer:1||AAO:1||weighted mobility:1||Ag/AgCl electrode:1||Ammonia:1||Au coating:1||Ballmilling:1||Band modification:1||Bi–Te–Se alloy:1||BiSbTe:1||Bi0.5Sb1.5Te3:1||Bi2(Te,Se)3:1||Bi2Te2.7Se0.3:1||Bluetooth:1||CO poisoning:1||

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1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114

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