ScholarWorks@Gachon: Lee, Sang Yeol

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Lee, Sang Yeol (이상렬)

반도체대학(학부) (반도체공학과)

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Tel 031-750-5341
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Amorphous oxide semiconductor:12||Thin film transistor:11||Sputtering:6||Thinfilm transistor:5||Amorphous oxide:5||amorphous oxide semiconductors:4||Nickel oxide:4||Amorphous:4||Energy storage device:3||Thin film:3||SiInZnO:3||Metal capping layer:3||Transparent electrode:3||OMO:3||OMO multilayer:3||Smart window:3||Low emissivity:3||thinfilm transistor:3||Optical properties:3||Density of states:3||Semiconductor device measurement:3||Transparent:2||Numerical simulation:2||Drude scattering model:2||Carrier injection:2||thinfilm transistors:2||Amorphous semiconductor:2||aSZTO:2||Field effect mobility:2||amorphous oxide semiconductor:2||Organic semiconductor:2||Oxide:2||Electrochromic:2||Electrochromic devices:2||Stability:2||Stress:2||TFT:2||TFTs:2||Electrodes:2||Thermal stability:2||Thin film transistors:2||metal:2||BilayerTFT:2||metal capping layer:2||Logic gates:2||Lowfrequency noise:2||Plasma treatment:2||Hydrochloric acid:1||Hysteresis:1||Indiumgalliumzinc oxide:1||Inelastic scattering:1||Inverters:1||Iron:1||Liquid crystalline binary mixtures:1||Logic circuit:1||Logic gate:1||Mesophase:1||Metal Capping Layer:1||Metals:1||Mn doped SnO2:1||Mobility:1||Modified National Institute of Standards and Technology (MNIST):1||Multivalued logic:1||Multilayer:1||NAND gate:1||NMOS inverter:1||NOR gate:1||Negative and positive bias stress:1||Negative bias temperature stress test:1||Negative differential resistance:1||Negative differential transconductance:1||NiO thin films:1||Nonhomogeneous media:1||O2 vacancies:1||OFF:1||OMO structure:1||Optical materials and properties:1||Optical variables measurement:1||Optoelectronic:1||Oxide semiconductor:1||Oxide/Metal/Oxide:1||Oxygen flow:1||Oxygen flow rate:1||Oxygen vacancies:1||P(VDFTrFE):1||PBTS:1||Photoluminescence:1||Phototransistors:1||Physical vapour deposition:1||Physicochemical properties:1||Post annealing treatment:1||Post process:1||Post treatment:1||Quantum dot:1||RF sputtering:1||Relaxation time:1||SIZO:1||SZTO:1||SZTO channel:1||Semiconductors:1||Si concentration:1||SiZnSnO:1||SiZnSnO (SZTO):1||Signaltonoise ratio:1||Silicon doping:1||TCAD simulation:1||TLM:1||Thermal investigations:1||Thickness:1||Thin films:1||ThinFilm transistor:1||Threshold voltage:1||Transmission line measurement:1||Transmission line method:1||Transparency:1||Transparent conducting electrode:1||Transparent conducting oxide:1||Transparent conducting oxides:1||Transparent diode:1||Tunneling:1||UV irradiation:1||UVphotoresponse:1||Unipolar inverter:1||Xray photoelectron spectroscopy:1||aSIZO:1||aSIZO thin film transistor:1||aSZTO TFTs:1||aSiZnSnO:1||amorphous oxide semiconductor (AOS):1||amorphous silicon indium zinc oxide (aSIZO):1||artificial synapse:1||artificial synaptic devices:1||bandgaps:1||bias stress:1||carrier injection:1||current ON:1||dynamic range:1||ferroelectric fieldeffect transistors:1||field effect mobility:1||field effect mobility (&:1||fieldeffect transistor (FET):1||heterostructure:1||heterostructure TFT:1||hump phenomena:1||hump phenomenon.:1||lowfrequency noise (LFN):1||metal capping:1||multilayered structure:1||ntype only inverters:1||negative differential resistance:1||optoelectronic synapse:1||oxide:1||oxide multilayer:1||oxygen partial pressure:1||peaktovalley current ratio:1||photoTFTs:1||photoinduced inverter.:1||phototransistor:1||phototransistors:1||resonant tunneling:1||subsource:1||subgap density of states (DOS):1||synaptic TFTs:1||thinfilm transistor (TFT).:1||#x03BC:1||thinfilm transistors (TFTs):1||2D materials:1||ASZTO:1||ASiZnSnO:1||Ag:1||Ambient Effect:1||Ammonia gas sensor:1||Amorphous Oxide Semiconductor:1||Amorphous SiliconZincTinOxide (aSZTO):1||Amorphous metal oxide semiconductor:1||Amorphous oxide semiconductor thin film transistors:1||Amorphous silicon indium zinc oxide (aSIZO):1||Amorphous siliconzinctinoxide:1||Annealing temperature:1||CapacitanceVoltage measurement:1||Carrier diffusion model:1||Channel resistance:1||Channel thickness:1||Comprehensive review:1||Copper iodide (CuI):1||Current voltage:1||Current rectification ratio:1||Debye length:1||Depletion load type inverter:1||Dielectric constant:1||Electric variables:1||Electrical characterization:1||Electrical property:1||Electrochromism:1||Electron conduction:1||Electron devices:1||Energy band alignment:1||Essential macleod program:1||Excess oxygen:1||FE):1||Ferromagnetic properties:1||Field effect transistors:1||Fieldeffect Transistor:1||Fieldeffect transistor:1||Flexible electrode:1||Frequency:1||Gas sensor:1||Heterojunction:1||HfO2:1||High k dielectrics:1||High mobility:1||Homojunction:1||

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