ScholarWorks@Gachon: Yoo, Ho Cheon

Detailed Information

Yoo, Ho Cheon (유호천)

반도체대학 (반도체·전자공학부)

Research Area: 반도체 소자 및 회로개발

Tel 031-750-5802
Homepage

ResearcherID ORCiD Scopus Google Scholar ID ResearchGate

Keyword

organic semiconductors:11||thinfilm transistors:7||Organic semiconductors:7||Logic gates:5||photodetectors:5||Thinfilm transistors:5||phototransistors:4||Inverters:4||Electrodes:4||negative differential resistance:3||annealing process:3||chemical doping:3||charge trapping:3||Transistors:3||heterostructure:3||Field effect transistors:3||selfassembled monolayer:2||electromyography:2||Metal oxides:2||Asymmetric Schottky junctions:2||optical sensors:2||Thin film transistors:2||small molecules:2||fieldeffect transistors:2||organic fieldeffect transistors:2||flexible:2||Biosensors:2||flexible circuits:2||flexible devices:2||flexible electronics:2||synaptic devices:2||memory:2||Heterojunction:2||thinfilm transistor:2||thinfilm transistors (TFTs):2||floatinggate:2||PECVD:2||transition metal dichalcogenides:2||PEDOT:2||transitionmetal dichalcogenides:2||PSS:2||Selfpowered operation:2||graphene:2||heterojunction:2||2D materials:2||photodetector:2||photodiodes:2||device modeling:2||phototransistor:2||Perovskite:2||Heterostructure:2||Behavioral sciences:2||plastic substrates:2||Phototransistors:2||Unipolar inverter:2||Vertical MSM structure:2||Antiambipolar:2||Organic materials:2||quantum dots:2||electrocardiography:2||negative transconductance:2||Voltage measurement:2||neuromorphic:2||Ambipolarity:2||neuromorphic devices:2||Leadfree:1||Logicinmemory:1||Low voltage:1||Material integration:1||Mathematical model:1||Memristor:1||Metal oxide:1||Metal routing:1||MgTiO3:1||MoS2:1||MoSe2:1||MoSe2 inverter:1||Molecular doping:1||Molybdenum disulfide:1||Multigate device:1||Multivalued logic:1||Ndoping:1||NAND:1||NOR:1||Negative differential resistance:1||Neuromorphic:1||Nirich cathodes:1||Nonvolatile memory:1||ODTS:1||OPDI:1||OTS:1||Optical microscopy:1||Optical switches:1||Optical variables measurement:1||Optoelectric:1||Organic memory:1||Organic semiconductors:1||Organicinorganic heterostructure:1||Orthorhombic:1||Oxide semiconductor:1||Oxygen vacancy:1||Packaging:1||Phenylphosphonic acid:1||Photodetectors:1||Photogating effect:1||Photosensitivity:1||Phototransistor:1||Physical Unclonable Function:1||Pickering emulsions:1||Poly(9, 9dinoctylfluorenyl2, 7diyl):1||Poly(9vinyl carbazole):1||Predictive models:1||Residual stress:1||Resistive memory:1||SAM:1||SAMFETs:1||Selfassembled monolayers:1||Selfassembled monolayers (SAMs):1||Selfpower:1||Semitransparent:1||Semiconductor device measurement:1||Separated layer thickness:1||Singlewalled carbon nanotube:1||SnO2 quantum dot:1||Solution process:1||Spalling technique:1||Stress:1||Substrates:1||Surface energy:1||Synaptic devices:1||TIPSPentacene:1||TMDs:1||Temperature stress:1||Thicknesscontrolled layer separation:1||Thinfilm transistor:1||Threedimensional integration:1||Transconductance:1||Transient analysis:1||Transition metal dichalcogenide:1||Transition metal dichalcogenides:1||Transition metal dichalcogenides (TMDs):1||Transitionmetal dichalcogenides:1||Transmission line measurements:1||Twodimensional semiconductors:1||UV pulsed laser annealing:1||UV sensors:1||Ultra broadband photodetection:1||Ultraviolet C:1||Vertical stacking:1||Viahole:1||Voltage gain:1||WSe2:1||ZeroVGS connection inverter:1||Zinctinoxide:1||aIGZO:1||aIGZO TFT:1||activematrix:1||adhesion lithography:1||adhesive:1||ambipolar organic transistors:1||ambipolar semiconductors:1||ammonia:1||amorphous silicon:1||amorphous silicon indium zinc oxide (aSIZO):1||antiambipolar transistor:1||antiambipolar transistors:1||antiambipolar transistors:1||arbitrary substrate:1||asymmetric source/drain:1||atomically thin material:1||band gap engineering:1||bandtoband tunneling:1||biocompatibility:1||biodegradability:1||biomedical engineering:1||biosensor:1||biosensors:1||biosignal detection:1||blended composites:1||causal inference:1||cavity effect:1||charge injection:1||charge transport:1||chemical sensors:1||circuit simulation:1||complementary electronics:1||complementary inverter:1||complementary inverter circuit:1||complementary inverters:1||complementarylogics:1||conductive polymer:1||contact resistance:1||crosslinking:1||data analysis:1||deep ultraviolet:1||degradability:1||device physics:1||digital inverter:1||dipole effect:1||dipole moment effects:1||displays:1||dopamine binding:1||doping effect:1||downscaling:1||electrical doping:1||electrocatalysts:1||electroencephalography:1||emerging materials:1||field effect transistor:1||field effect transistors:1||fieldeffect transistor:1||fieldeffect transistor (FET):1||fine patterning:1||flexible CMOS devices:1||flexible metal:1||flexible textile:1||fluoropolymers:1||formaldehyde:1||frame:1||gate dielectric:1||gate dielectrics:1||gate structure:1||grain boundary:1||hardware learning rules:1||hardware security:1||hazard monitoring:1||heterointerface structures:1||#8208:1||heterojunctions:1||heterostructures:1||high capacity:1||highgain amplifying device:1||hybrid devices:1||hybrid structure:1||hydrogen evolution reaction:1||hysteresis:1||inkjet printing:1||interconnection:1||interface phenomena:1||interfacial traps:1||inverter:1||inverter circuit:1||lasers:1||lightcontrolled circuits:1||lightemitting device:1||lithiumion batteries:1||lithography compatibility:1||logic circuit:1||logicinmemory:1||logicinmemory circuit:1||longlasting durability:1||machine learning attack:1||magnetron sputtering:1||metal oxides:1||metal routing:1||metaloxide semiconductor:1||molecular ndoping:1||molybdenum diselenide:1||molybdenum diselenide (MoSe2):1||molybdenum disulfide:1||molybdenum disulfide (Mos(2)):1||molybdenumditelluride:1||morphology control:1||multi switching:1||multigate transistors:1||multistate memory:1||multivalued logic circuits:1||multigate devices:1||multilayer MoS2:1||multilayer transition metal dichalcogenides (TMDs):1||multilevel logic:1||multiple security keys:1||n heterojunction:1||nanograin:1||nanoemitter:1||nanogap:1||nanostructure devices:1||negative differential resistances:1||negative differeritial resistance:1||negative transconductance (NTC):1||neuromorphic device:1||nitric dioxide:1||nitric oxide:1||optical flame sensing:1||optical memories:1||optoelectrical devices:1||optoelectronic logic:1||optoelectronics:1||organic semiconductor:1||organic transistors:1||oxide perovskite:1||oxide semiconductor film:1||oxide semiconductors:1||oxygen flow rate:1||oxygen vacancy:1||p&:1||pn heterojunction:1||ptype transistor:1||pentacene:1||perovskite:1||phase engineering:1||phase modulations:1||photo memory:1||photo transistor:1||photo triggered:1||photoactivated gas detectors:1||photoinduced doping:1||photoinduced inverter.:1||photomemory:1||photogating:1||photovoltaics:1||physical unclonable function:1||physical unclonable functions (PUFs):1||plasmaenhanced chemical vapor deposition:1||plasmaenhanced chemical vapor depositions:1||polar polymer:1||polymer dielectric:1||polymer electrode:1||polymer gate dielectric:1||polymer thin film:1||raman spectroscopy:1||randomaccess memories:1||reconfigurable:1||resistfree transfer:1||resistive switching memory:1||ring oscillator:1||saturation voltage (V (Sat)):1||selective annealing:1||selfassembled monolayers:1||selfpower:1||sensor application:1||sensor devices:1||sensors:1||sensory adaptation:1||solar cell:1||solarblind:1||solarblind photodetector:1||solution process:1||spectroscopy analysis:1||spherulite:1||splitgate:1||stochastic alignment:1||stretchable:1||synapses:1||ternary inverter:1||thinfilm circuits:1||thinfilm electronics:1||thinfilms:1||thresholdvoltage shift:1||transitionmetal dichalcagenides (TMDs):1||transparent:1||tunneling fieldeffect transistor:1||twodimensional nanomaterials:1||twodimensional transition metal dichalcogenides:1||ultraviolet:1||ultraviolet photodetectors:1||ultrawide band gap semiconductor:1||vacuum processing:1||vapor deposition:1||vertical stacking:1||visible light:1||visual sensors:1||water:1||zinc oxide:1||zinctin oxide:1||heterojunction transistors:1||1TWS2:1||2D simulation:1||2D semiconductor:1||2D semiconductor material:1||2D simulation:1||3D ion transport channels:1||Airexposure effects:1||Airstable:1||Ambipolar:1||Ambipolar semiconductors:1||Ambipolar transistors:1||Analytical models:1||Arc discharge detection:1||Atomically thin film:1||Bias stress:1||Bilayers:1||Biodegradable:1||Bridge transistors:1||Broadband detectors:1||C60:1||CMOS performance:1||CaTiO3:1||Carbonchain:1||Charge transport:1||Circuit simulation:1||Color sensing:1||Compact modeling:1||Complementary inverter:1||Composite dry electrode:1||Contact resistance:1||Current measurement:1||Cytop:1||DNTT:1||Dark current:1||Diode connection inverter:1||Doping:1||Doping:1||Doping effect control:1||Electret:1||Electric variables:1||Electrical biosignals:1||Electrical doping:1||Electron traps:1||Ferroelectric:1||Flexible:1||Flexible electrodes:1||Floating gate:1||Floatinggate:1||Fluoropolymer:1||Gate dielectrics:1||Gold:1||Grain boundary:1||Graphene:1||Hardware based security system:1||Heterostructure:1||Heterojunctions:1||Hysteresis:1||IC circuit:1||IGZO transistors:1||ITO/IGZO energy band structure:1||Ink jet printing:1||Inkjet printing:1||Integrated circuit modeling:1||Interface trap engineering:1||

STATISTICS: Total View :3,730,082; Today View :2,013

RSS_1.0 RSS_2.0 ATOM_1.0

1342, Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do, Republic of Korea(13120)031-750-5114

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Keyword

BROWSE