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Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor deviceGo to Linkopen access

Lee, Ganggyu; Lee, Yeram; Kim, Sungmin; Kim, Donghwan; Park, Hongjun; 우명주; Song, Taeseup; Paik, Ungyu

ArticleIssue Date2023CitationScientific Reports, v.13, no.1, pp 1 - 9PublisherNature Publishing Group
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