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Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memoryGo to Link

An, J. S.; Kim, K. J.; Choi, C. M.; Shindo, S.; Sutou, Y.; Song, Yun Heub

ArticleIssue Date2018CitationElectronics Letters, v.54, no.6, pp 350 - 351PublisherInstitute of Electrical Engineers
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