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Interface-driven polarization field screening in Hf0.5Zr0.5O2/poly-Si stacks for 3D ferroelectric NAND flash memoryGo to Link

Choi, Seonjun; Bang, Seungho; Namgung, Junseo; Kang, Wooyoung; Jeong, Yu-Jun; Kim, Yeongseo; Bae, Hyeongyeong; An, Chihwan; Jung, Yei Hwan; Chae, Seung Chul, et al.

ArticleIssue Date2026CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.1050, pp 1 - 8PublisherELSEVIER SCIENCE SA
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