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A universal re-annealing method for enhancing endurance in hafnia ferroelectric memories: Insights from stochastic noise analysis Go to Link

Koo, Ryun-Han; Shin, Wonjun; Im, Jiseong; Ryu, Sangwoo; Kim, Seungwhan; Kim, Jangsaeng; Choi, Kangwook; Park, Sung-Ho; Ko, Jonghyun; Ji, Jongho, et al.

ArticleIssue Date2025CitationChaos, Solitons & Fractals, v.199, pp 1 - 8PublisherPergamon Press Ltd.

SCIESCOPUS

Interface percolation and random trap generation in ferroelectric memory: A two-step degradation mechanism explored through low-frequency noise spectroscopy Go to Link

Koo, Ryun-Han; Shin, Wonjun; Im, Jiseong; Kim, Seungwhan; Ryu, Sangwoo; Jung, Gyuweon; Kim, Jangsaeng; Park, Sung-Ho; Choi, Kangwook; Ko, Jonghyun, et al.

ArticleIssue Date2025CitationChaos, Solitons & Fractals, v.199, pp 1 - 10PublisherPergamon Press Ltd.

SCIESCOPUSKCI

Physical correlation between stochasticity and process-induced damage in ferroelectric memory devices Go to Link open access

Koo, Ryun-Han; Kim, Seungwhan; Im, Jiseong; Ryu, Sangwoo; Choi, Kangwook; Park, Sung-Ho; Ko, Jonghyun; Ji, Jongho; Oh, Mingyun; Kim, Jangsaeng, et al.

ArticleIssue Date2025CitationNano Convergence, v.12, no.1, pp 1 - 15PublisherSpringer | Korea Nano Technology Research Society

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Browsing by Choi, KangwookAuthor

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