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Degradation of 2DEG transport properties in GaN-capped AlGaN/GaN heterostructures at 600 °C in oxidizing and inert environmentsGo to Link

Hou, Minmin; Jain, Sambhav R.; So, Hongyun; Heuser, Thomas A.; Xu, Xiaoqing; Suria, Ateeq J.; Senesky, Debbie G.

ArticleIssue Date2017CitationJournal of Applied Physics, v.122, no.19PublisherAmerican Institute of Physics
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