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A High-Hole Mobility Tellurium Transistor With Electron-Donating Passivation Layer for Scalable, High-Throughput ElectronicsGo to Link

Nam, Taehyun; Lee, Seung Min; Lee, Chungryeol; Lee, Changhyeon; Jeong, Sunwoo; Seo, Seunghwan; Kim, Youson; Park, Jeong-ik; Hong, Seokhyun; Yun, Hyung Joong, et al.

ArticleIssue Date2026CitationADVANCED FUNCTIONAL MATERIALS, v.36, no.47, pp 1 - 18PublisherWILEY-V C H VERLAG GMBH
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