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Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma TechniqueGo to Link

Woo, Sanghyun; Hong, Hyunseok; Kim, Seokhoon; Kim, Hyungchul; Kim, Jinwoo; Jeon, Hyeongtag; Bae, Choelhwyi; Okada, Takayuki; Sawada, Kazuaki; Ishida, Makoto

ArticleIssue Date2008CitationJapanese Journal of Applied Physics, v.47, no.8, pp 6196 - 6199PublisherIOP Publishing Ltd
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