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Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive MemoryGo to Link

Song, Jaehoon; Inamdar, Akbar I.; Jang, ByeongUk; Jeon, Kiyoung; Kim, YoungSam; Jung, Kyooho; Kim, Yongmin; Im, Hyunsik; Jung, Woong; Kim, Hyungsang, et al.

ArticleIssue Date2010CitationApplied Physics Express, v.3, no.9, pp 1 - 3PublisherIOP Publishing Ltd
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