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Physical modeling of program and erase speeds of metal-oxide-nitride-oxide-silicon cells with three-dimensional gate-all-around architectureGo to Link

Lee, Gae-Hun; Yang, Hyung-Jun; Jung, Sung-Wook; Choi, Eun-Seok; Park, Sung-Kye; Song, Yun-Heub

ArticleIssue Date2014CitationJapanese Journal of Applied Physics, v.53, no.1, pp 1 - 4PublisherIOP Publishing Ltd
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