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The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate DielectricsGo to Link

Kim, Jiye; Jang, Jaeyoung; Kim, Kyunghun; Kim, Haekyoung; Kim, Se Hyun; Park, Chan Eon

ArticleIssue Date2014CitationAdvanced Materials, v.26, pp 7241 - 7246PublisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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