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Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interfaceGo to Link

Park, Chul Hong; Lee, Gyubaek; Lee, Kwang Hong; Im, Seongil; Lee, Byoung Ho; Sung, Myung Mo

ArticleIssue Date2009CitationApplied Physics Letters, v.95, no.15, pp 1 - 3PublisherAmerican Institute of Physics
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