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High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layerGo to Link

Roh, IlPyo; Kim, SangHyeon; Geum, Dae-Myeong; Lu, Wenjie; Song, Yun Heub; del Alamo, Jesus A.; Song, JinDong

ArticleIssue Date2018CitationApplied Physics Letters, v.113, no.9PublisherAmerican Institute of Physics
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