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Oxide Channel Ferroelectric NAND Device with Source-tied Covering Metal Structure: Wide Memory Window (14.3 V), Reliable Retention (> 10 years) and Disturbance Immunity (ΔVth ≤ 0.1 V) for QLC OperationGo to Link

Joh, Hongrae; Kim, Giuk; Ock, Jihye; Kim, Seungyeob; Lee, Sangmok; Lee, Sangho; Kim, Kwangsoo; Lim, Suhwan; Woo, Jongho; Kim, Wanki, et al.

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4
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