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Influence of chlorine on the memory characteristics of MONOS device with Plasma-Enhanced atomic layer deposited Si3N4 charge trap layerGo to Link

Kim, Sejin; Choi, Sehyeon; Park, San; Ku, Boncheol; Kim, Hyungjun; Lim, Yun Seo; Park, Ji Su; Yang, Jaehyun; Kim, Bio; Son, Youngseon, et al.

ArticleIssue Date2025CitationApplied Surface Science, v.698, pp 1 - 8PublisherElsevier BV
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