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MAPbBr3 Halide Perovskite-Based Resistive Random-Access Memories Using Electron Transport Layers for Long Endurance Cycles and Retention TimeGo to Link

Kim, Hyojung; Kim, Joo Sung; Choi, Jaeho; Kim, Young-Hoon; Suh, Jun Min; Choi, Min-Ju; Shim, Young-Seok; Kim, Soo Young; Lee, Tae-Woo; Jang, Ho Won

ArticleIssue Date2024CitationACS Applied Materials & Interfaces, v.16, no.2, pp 2457 - 2466PublisherAmerican Chemical Society
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