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SCISCIESCOPUS
Bidirectional Two-Terminal Switching Device for Non-Volatile Random Access MemoryGo to Link

Kil, Gyu-Hyun; Yang, Hyung-Jun; Lee, Gae-Hun; Lee, Seong-Hyun; Song, Yun-Heub

ArticleIssue Date2012CitationJapanese Journal of Applied Physics, v.51, no.4, pp 1 - 4PublisherIOP Publishing Ltd
DOMESTIC
Effect of the trap level of the silicon nitride layer on the retention characteristics of GAA-MONOS charge trap memories at elevated temperatureGo to Link

Lee, Gae-Hun; Yang, Hyung-Jun; Song, Yun Heub

ArticleIssue Date2014CitationJoint conference of the international industrial information systems conference & the international conference on computers, communications and systems, pp 74 - 76PublisherKorea Society of Industrial Information Systems
SCISCIESCOPUS
Novel device structure for phase change memory toward low-current operationGo to Link

Kim, Eunha; Kang, Nam Soo; Yang, Hyung-Jun; Sutou, Yuji; Song, Yun-Heub

ArticleIssue Date2015CitationJapanese Journal of Applied Physics, v.54, no.9, pp 1 - 4PublisherIOP Publishing Ltd
SCOPUS
On-state darin current modeling for grain and grain boundary effect of the polysilicon materials at various temperaturesGo to Link

Yang, Hyung-Jun; Lee, Gae-Hun; Song, Yun-Heub

ArticleIssue Date2014CitationProceedings of 2014 4th IEEE International Conference on Network Infrastructure and Digital Content, IEEE IC-NIDC 2014, pp.200 - 203PublisherInstitute of Electrical and Electronics Engineers Inc.
SCISCIESCOPUS
Physical modeling of program and erase speeds of metal-oxide-nitride-oxide-silicon cells with three-dimensional gate-all-around architectureGo to Link

Lee, Gae-Hun; Yang, Hyung-Jun; Jung, Sung-Wook; Choi, Eun-Seok; Park, Sung-Kye; Song, Yun-Heub

ArticleIssue Date2014CitationJapanese Journal of Applied Physics, v.53, no.1, pp 1 - 4PublisherIOP Publishing Ltd
SCISCIESCOPUS
Retention characteristics of gate-all-around metal-oxide-nitride-oxide-semiconductor devices for the trap energy level dependence at elevated temperatureGo to Link

Yang, Hyung-Jun; Lee, Gae-Hun; Song, Yun-Heub

ArticleIssue Date2014CitationJapanese Journal of Applied Physics, v.53, no.10, pp 1 - 4PublisherIOP Publishing Ltd
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