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Orientational Relationships and Atomic Arrangements of GaN Nanorods Grown on Al2O3 (0001) Substrates by Using Hydride Vapor Phase EpitaxyGo to Link

Lee, K. H.; Lee, J. Y.; Kwon, Y. H.; Ryu, S. Y.; Kang, T. W.; Yoo, C. H.; Kim, T. W.

ArticleIssue Date2010CitationJournal of Nanoscience and Nanotechnology, v.10, no.5, pp 3435 - 3439PublisherAmerican Scientific Publishers
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