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Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell Go to Link

Lee, Seongwon; Kim, Haesung; Yang, Hyojin; Yun, Sanghyuk; Park, Junseong; Lee, Haneul; Park, Sejun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong, et al.

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.4, pp 562 - 565PublisherInstitute of Electrical and Electronics Engineers

SCIESCOPUS

Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer Go to Link

Kim, Haesung; Yang, Hyojin; Lee, Seongwon; Yun, Sanghyuk; Park, Junseong; Park, Sejun; Lee, Ha-Neul; Kim, Hyeonsik; Choi, Sung-Jin; Kim, Dae Hwan, et al.

ArticleIssue Date2024CitationApplied Physics Letters, v.124, no.3, pp 1 - 7PublisherAmerican Institute of Physics

SCIESCOPUS

Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor Go to Link open access

Lee, Haneul; Kim, Sujong; Han, Changhyeon; Kim, Haesung; Yang, Hyojin; Park, Sejun; Yun, Sanghyuk; Lee, Yoon Jung; Choi, Sung-Jin; Kim, Dae Hwan, et al.

ArticleIssue Date2026CitationADVANCED ELECTRONIC MATERIALS, v.12, no.2, pp 1 - 10PublisherWILEY

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Browsing by Yun, SanghyukAuthor

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