https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/232 Sat, 04 Jul 2026 04:00:39 GMT 2026-07-04T04:00:39Z https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212266 Title: Substrate-field-modulated remote-van der Waals hybrid epitaxy in transition metal dichalcogenide heterostructures Authors: Handriani, Lia Saptini; Jang, Suhee; Kim, Yelim; Yun, Hyuncheol; Jeong, Dae Yeop; Park, Hyeonsu; Gao, Zhe; Jang, Jae-il; Park, Won Il Abstract: Two-dimensional (2D) transition-metal dichalcogenide (TMDC) heterostructures are promising for next-generation optoelectronics, yet the mechanisms controlling their vertical heteroepitaxy remain poorly understood. Here, we systematically investigate metal–organic chemical vapor deposition growth of MoS2/WS2 and WS2/MoS2 vertical heterostructures across varying interlayer thicknesses (monolayer to multilayer) and substrates (Si, SiO2 and c-sapphire). We identify a substrate-field-modulated “remote–van der Waals (vdW) hybrid epitaxy” regime, in which vertical overgrowth is confined to a narrow thickness window (~ 1–3 layers), with nucleation density strongly influenced by substrate polarity and defect chemistry. High-resolution STEM reveals that, in the regions where vertical growth occurs, the in-plane crystallographic registry is primarily governed by vdW coupling to the 2D template, yielding a highly preferred single-orientation registry across the examined regions for both stacking orders. This dual-control mechanism decouples growth propensity from epitaxial alignment, providing a scalable framework for synthesizing high-quality 2D vertical heterostructures with precisely engineered interfaces. Tue, 01 Dec 2026 00:00:00 GMT https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212266 2026-12-01T00:00:00Z https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/211536 Title: Nonlinear quantized conductance dynamics in vertical SiN RRAM for scalable memory-learning integration Authors: Park, Jihee; Kim, Nawoon; Na, Hyesung; Kim, Hyungjin; Kim, Sungjun Abstract: We report a vertical resistive random-access memory device based on a Pt/SiN/Ti stack, designed for multi-bit storage and neuromorphic computing. The device exhibits stable bipolar switching and achieves up to 7-bit (128-level) conductance states through precise control of compliance current and reset voltage. Quantized conductance plateaus, corresponding to integer and half-integer multiples of the quantum conductance G<inf>0</inf> = 2e2/h, reveal atomic-scale filament dynamics governed by nonlinear conduction processes. Diverse synaptic plasticity functions, including spike-number-, spike-rate-, spike-duration-, and spike-amplitude-dependent plasticity, were experimentally emulated. Neuromorphic simulations for the Modified National Institute of Standards and Technology dataset achieved classification accuracies exceeding 94 %, confirming the device's suitability for high-precision weight modulation. The vertical architecture ensures scalability toward three-dimensional integration, while robust retention and compatibility with current-based multi-bit modulation highlight its potential for complex-system-inspired edge AI and in-memory computing hardware. Tue, 01 Sep 2026 00:00:00 GMT https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/211536 2026-09-01T00:00:00Z https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212268 Title: Atomic layer processing for Ångström-scale precision in 3D-integrated semiconductor manufacturing Authors: Yang, Hae Lin; Kim, Min Chan; Park, Gi-Beom; Park, Ji-Yeon; Park, Hyein; Shin, Jihoon; Ahn, Jinho; Park, Jin-Seong Abstract: For decades, conventional geometric scaling has driven performance improvements in the semiconductor industry. However, the continued reduction in technology nodes has increasingly become decoupled from simple dimensional shrinkage, instead reflecting transitions toward new device architectures, shifts in established process paradigms, and demands for unprecedented process precision. In this context, critical functional layers—such as insulators, metal interconnects, and interfaces—now require atomic- and sub-nanometer-scale control over film profiles and material properties. From this process-centric perspective, the semiconductor industry can be defined as entering an era of Ångström-scale precision. Atomic layer processing (ALP), a unified framework integrating atomic layer deposition, atomic layer etching, and area-selective deposition, has emerged as a key enabling technology for this transition. By leveraging self-limiting surface reactions, ALP enables atomic- and sub-nanometer-scale control over thickness, composition, and selectivity, facilitating void-free film formation in complex three-dimensional architectures, high-precision selective patterning, and atomic-scale engineering of materials and interfaces. Moreover, by bridging deposition, etching, and selectivity within a single chemistry-driven framework, ALP provides a scalable process pathway that extends beyond the limits of conventional geometric and material scaling. Ultimately, ALP represents not merely an incremental process innovation but a paradigm shift toward atomically precise manufacturing, fundamentally redefining how materials, interfaces, and device architectures are realized beyond nanometer-scale control. Sat, 01 Aug 2026 00:00:00 GMT https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212268 2026-08-01T00:00:00Z https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212785 Title: Thermal atomic layer deposition of SiNx protective coatings for hydrogen plasma-resistant carbon nanotube pellicles Authors: Kang, Young Woo; Kim, Haneul; Lee, Inseo; Lee, Taeho; Park, In-Sung; Ahn, Jinho Abstract: Thermal atomic layer deposition of silicon nitride (SiNx) as a conformal protective coating was investigated to enhance the hydrogen-plasma resistance of carbon nanotube (CNT) pellicles for extreme ultraviolet (EUV) lithography. SiNx films were deposited on Si wafers and free-standing CNT membranes in a tube-type furnace using Si2Cl6 and NH3 precursors, and the growth behavior was systematically examined over 500–800 °C. An effective ALD window was identified at 650–700 °C, yielding a growth per cycle of ∼1.9 Å/cycle. The deposited films on both Si wafers and CNT membranes exhibited Si–N-dominant bonding with no significant compositional difference between the substrates, together with low oxygen incorporation and negligible chlorine residues. After ozone pretreatment, continuous and conformal SiNx coatings were formed over the CNT network. The optical impact of the coating was evaluated at 13.5 nm; SiNx-coated CNT pellicles exhibited 95.2 % EUV transmittance, corresponding to a 2.5 percentage-point reduction compared with bare CNT pellicles. Hydrogen plasma exposure tests showed severe degradation of uncoated CNT pellicles, whereas SiNx-coated CNTs retained their morphology. These results demonstrate that thermal deposition of SiNx is an effective protective coating strategy for improving the durability of CNT pellicles in EUV lithography environments. Sat, 01 Aug 2026 00:00:00 GMT https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212785 2026-08-01T00:00:00Z