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Characteristics of 2D SnS2 as a Channel Layer in TFT Device
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-02T09:56:59Z | - |
| dc.date.available | 2021-08-02T09:56:59Z | - |
| dc.date.issued | 2019-12-03 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/11170 | - |
| dc.title | Characteristics of 2D SnS2 as a Channel Layer in TFT Device | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2019 MRS Fall Meeting & Exhibit | - |
| dc.citation.conferencePlace | Hynes Convention Center & Sheraton Boston Hotel in Boston, Massachusetts, U.S.A | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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