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Characteristics of Gate spacer SiNx film deposited using H2 and N2 plasma reactant via Remote Plasma atomic layer deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2021-08-02T09:57:40Z | - |
| dc.date.available | 2021-08-02T09:57:40Z | - |
| dc.date.issued | 2019-11-19 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/11347 | - |
| dc.title | Characteristics of Gate spacer SiNx film deposited using H2 and N2 plasma reactant via Remote Plasma atomic layer deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2019년 추계학술대회 반도체/디스플레이 스마트 공정을 위한 소재/부품/장비 혁신 기술 | - |
| dc.citation.conferencePlace | 한양대학교 종합기술원(HIT관) 6층 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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