Effect of Dry Thermal Oxidation on Bulk GaN Substrates Grown by HVPE during CMP
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Hyo Sang | - |
dc.contributor.author | Lee, Joo Hyung | - |
dc.contributor.author | Lee, Hee Ae | - |
dc.contributor.author | Lee, Seung Hoon | - |
dc.contributor.author | Park, Won Il | - |
dc.contributor.author | Lee, Seong Kuk | - |
dc.contributor.author | Park, Jae Hwa | - |
dc.contributor.author | Yi, Sung Chul | - |
dc.date.accessioned | 2021-08-02T10:28:27Z | - |
dc.date.available | 2021-08-02T10:28:27Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-12 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/11648 | - |
dc.description.abstract | Chemical mechanical polishing (CMP) of bulk GaN substrates via dry thermal oxidation is investigated in this paper. In this work, we study the effects of oxidation with respect to different thermal treatments, change in morphology and thickness on bulk GaN substrates. The results of the study show that a defect-free surface with roughness average (Ra) and material removal rate (MRR) of 0.377 nm and 51 mu m/h respectively is achievable by CMP after thermal treatment at 800 degrees C. However, for thermal treatments above 900 degrees C, several pits and defects are observed with significant deformation of the surface likely due to the domination of diffusioncontrolled reaction over interfacial reaction-controlled. The molar fractions of the chemical components remained on the polished GaN surfaces are characterized via X-ray photoelectron spectroscopy. It is found that the conversion rate from GaN to Ga2O3 is dependent on the real contact area between CMP pad and GaN substrate surface during the CMP. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Effect of Dry Thermal Oxidation on Bulk GaN Substrates Grown by HVPE during CMP | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Won Il | - |
dc.contributor.affiliatedAuthor | Yi, Sung Chul | - |
dc.identifier.doi | 10.1149/2.0221912jss | - |
dc.identifier.scopusid | 2-s2.0-85077493993 | - |
dc.identifier.wosid | 000503204300001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.8, no.12, pp.811 - 820 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 8 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 811 | - |
dc.citation.endPage | 820 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GALLIUM NITRIDE | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/2.0221912jss | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.