Layered deposition of SnS₂ grown by atomic layer deposition and its transport properties
DC Field | Value | Language |
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dc.contributor.author | Lee, Namgue | - |
dc.contributor.author | Lee, Gunwoo | - |
dc.contributor.author | Choi, Hyeongsu | - |
dc.contributor.author | Park, Hyunwoo | - |
dc.contributor.author | Choi, Yeonsik | - |
dc.contributor.author | Seo, Hojun | - |
dc.contributor.author | Ju, HyoungBeen | - |
dc.contributor.author | Kim, Sunjin | - |
dc.contributor.author | Sul, Onejae | - |
dc.contributor.author | Lee, Jeongsu | - |
dc.contributor.author | Lee, Seung Beck | - |
dc.contributor.author | Jeon, Hyeong tag | - |
dc.date.accessioned | 2021-08-02T10:52:49Z | - |
dc.date.available | 2021-08-02T10:52:49Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/12490 | - |
dc.description.abstract | In this work, we report on the layered deposition of few-layer tin disulfide (SnS₂) using atomic layer deposition (ALD). By varying the ALD cycles it was possible to deposit poly-crystalline SnS₂ with small variation in layer numbers. Based on the ALD technique, we developed the process technology growing few-layer crystalline SnS₂ film (3-6 layers) and we investigated their electrical properties by fabricating bottom-gated thin film transistors using the ALD SnS₂ as the transport channel. SnS₂ devices showed typical n-type characteristic with on/off current ratio of similar to 8.32 x 10(6), threshold voltage of similar to 2 V, and a subthreshold swing value of 830 mV decade(-1) for the 6 layers SnS₂. The developed SnS₂ ALD technique may aid the realization of two-dimensional SnS₂ based flexible and wearable devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Layered deposition of SnS₂ grown by atomic layer deposition and its transport properties | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Seung Beck | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeong tag | - |
dc.identifier.doi | 10.1088/1361-6528/ab2d89 | - |
dc.identifier.scopusid | 2-s2.0-85071955246 | - |
dc.identifier.wosid | 000477577800001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.30, no.40 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 30 | - |
dc.citation.number | 40 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DISULFIDE | - |
dc.subject.keywordPlus | GAS | - |
dc.subject.keywordPlus | CVD | - |
dc.subject.keywordAuthor | tin disulfide | - |
dc.subject.keywordAuthor | post-transition metal dichalcogenides | - |
dc.subject.keywordAuthor | two-dimensional materials | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | field effect transistor | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/1361-6528/ab2d89 | - |
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