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High Performance MoS2/p+-Si Heterojunction Field-Effect Transistors by Interface Modulation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김은규 | - |
| dc.date.accessioned | 2021-12-24T01:39:29Z | - |
| dc.date.available | 2021-12-24T01:39:29Z | - |
| dc.date.created | 2021-11-27 | - |
| dc.date.issued | 2021-08-20 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/133696 | - |
| dc.publisher | 한국진공학회 | - |
| dc.title | High Performance MoS2/p+-Si Heterojunction Field-Effect Transistors by Interface Modulation | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 김은규 | - |
| dc.identifier.bibliographicCitation | 제 61회 한국진공학회 하계정기학술대회 | - |
| dc.relation.isPartOf | 제 61회 한국진공학회 하계정기학술대회 | - |
| dc.citation.title | 제 61회 한국진공학회 하계정기학술대회 | - |
| dc.citation.conferencePlace | 소노캄 제주 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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