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MoS2 as an interfacial layer for Remote epitaxial growth of ZnO on GaN

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dc.contributor.author박원일-
dc.date.accessioned2022-02-03T01:44:59Z-
dc.date.available2022-02-03T01:44:59Z-
dc.date.created2022-01-01-
dc.date.issued2021-11-25-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/134144-
dc.publisher한국재료학회-
dc.titleMoS2 as an interfacial layer for Remote epitaxial growth of ZnO on GaN-
dc.typeConference-
dc.contributor.affiliatedAuthor박원일-
dc.identifier.bibliographicCitation2021 한국재료학회 추계학술대회-
dc.relation.isPartOf2021 한국재료학회 추계학술대회-
dc.citation.title2021 한국재료학회 추계학술대회-
dc.citation.conferencePlace경주 라한호텔-
dc.type.rimsCONF-
dc.description.journalClass2-
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COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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