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A small-molecule-templated nanostructure back electrode for enhanced light absorption and photocurrent in perovskite quantum dot photovoltaics

Authors
Han, SanghunKim, JigeonKim, Dong EonKo, Min JaeChoi, JongminBaek, Se-WoongKim, Younghoon
Issue Date
Apr-2022
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY A, v.10, no.16, pp.8966 - 8974
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS CHEMISTRY A
Volume
10
Number
16
Start Page
8966
End Page
8974
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/138923
DOI
10.1039/d2ta00681b
ISSN
2050-7488
Abstract
Advances in the surface ligand exchange process of all-inorganic CsPbI3 perovskite colloidal quantum dots (PQDs) have enabled the fabrication of conductive PQD solids and their utilization as photovoltaic (PV) absorbers in next-generation solution-processed thin-film solar cells. However, PQD absorbers fabricated using the ligand exchange approach for application in high-efficiency PQD solar cells do not absorb, but transmit, a significant amount of the incident solar light. In addition, PQD absorbers are not suitable for fabricating thick films because of their short carrier diffusion length. Herein, we demonstrate that the introduction of nanophotonic structures in CsPbI3-PQD solar cells increases their light absorption via the light scattering effect, thereby improving their PV performance while maintaining the PQD absorber film thickness. We fabricate nanostructures on a spiro-OMeTAD hole-transport layer with sufficient film thickness and flexibility using nanoimprint lithography. We also find that a short spin-coating time is required to fabricate well-defined nanostructures on spiro-OMeTAD because of its high glass transition temperature. Thus, the nanostructured CsPbI3-PQD solar cells with a power conversion efficiency of up to 15.0% and a current density of 16.5 mA cm(-2) show improved PV performance as compared to the flat control device with the same PQD absorber film thickness.
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