Plasma-resistant characteristics according to sintering conditions of CaO-Al2O3-SiO2 glass coating layer

Abstract

The present study examined how the microstructure and plasma-resistant characteristics of CaO-Al2O3-SiO2 (CAS) glass layers coated on sintered alumina substrates were affected by the applied sintering conditions. Coated layers were formed using a bar-coating method, subsequently subjected to the de-binding process, and then finally sintered at temperatures lower than the crystallization temperature of the glass, ranging from 950 to 1000 degrees C, for varying durations. The coated layer composed solely of CAS glass exhibited an etch rate approximately four times lower than that of alumina. The lowest etch rate of the CAS glass layer was 13.25 nm/min at 950 degrees C 15 min, showing the best plasma resistance. It was also found that the glass layers became increasingly crystallized with increasing temperature and duration, and this then reduced their plasma resistance. The etch rate of glass when crystalline phases were present was found to be 35.31 nm/min.