Electrically and Optically Controllable p-n Junction Memtransistor Based on an Al2O3 Encapsulated 2D Te/ReS2 van der Waals Heterostructure
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Duc Anh Nguyen | - |
dc.contributor.author | Jo, Yongcheol | - |
dc.contributor.author | Thi Uyen Tran | - |
dc.contributor.author | Jeong, Mun Seok | - |
dc.contributor.author | Kim, Hyungsang | - |
dc.contributor.author | Im, Hyunsik | - |
dc.date.accessioned | 2022-07-06T11:08:41Z | - |
dc.date.available | 2022-07-06T11:08:41Z | - |
dc.date.created | 2021-12-08 | - |
dc.date.issued | 2021-12 | - |
dc.identifier.issn | 2366-9608 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/140218 | - |
dc.description.abstract | The exploration of memtransistors as a combination of a memristor and a transistor has recently attracted intensive attention because it offers a promising candidate for next-generation multilevel nonvolatile memories and synaptic devices. However, the present state-of-the-art memtransistors, which are based on a single material, such as MoS2 or perovskite, exhibit a relatively low switching ratio, require extremely high electric fields to modulate bistable resistance states and do not perform multifunctional operations. Here, the realization of an electrically and optically controllable p-n junction memtransistor using an Al2O3 encapsulated 2D Te/ReS2 van der Waals heterostructure is reported. The hybrid memtransistor shows a reversible bipolar resistance switching behavior between a low resistance state and a high resistance state with a high switching ratio up to 10(6) at a low operating voltage (<10 V), high cycling endurance, and long retention time. Moreover, multiple resistance states are achieved by applying different bias voltages, gate voltages, or light powers. In addition, logical operations, including the inverter and AND/OR gates, and synaptic activities are performed by controlling the optical and electrical inputs. The work offers a novel strategy for the reliable fabrication of p-n junction memtransistors for multifunctional devices and neuromorphic applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Electrically and Optically Controllable p-n Junction Memtransistor Based on an Al2O3 Encapsulated 2D Te/ReS2 van der Waals Heterostructure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Mun Seok | - |
dc.identifier.doi | 10.1002/smtd.202101303 | - |
dc.identifier.scopusid | 2-s2.0-85118501423 | - |
dc.identifier.wosid | 000714787100001 | - |
dc.identifier.bibliographicCitation | SMALL METHODS, v.5, no.12, pp.1 - 10 | - |
dc.relation.isPartOf | SMALL METHODS | - |
dc.citation.title | SMALL METHODS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | MEMRISTOR | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordAuthor | Al2O3 encapsulation | - |
dc.subject.keywordAuthor | heterostructure p-n junctions | - |
dc.subject.keywordAuthor | logic gates | - |
dc.subject.keywordAuthor | memtransistors | - |
dc.subject.keywordAuthor | ReS2 tellurene | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/smtd.202101303 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.