Large-Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nguyen, Duc Anh | - |
dc.contributor.author | Park, Dae Young | - |
dc.contributor.author | Duong, Ngoc Thanh | - |
dc.contributor.author | Lee, Kang-Nyeoung | - |
dc.contributor.author | Im, Hyunsik | - |
dc.contributor.author | Yang, Heejun | - |
dc.contributor.author | Jeong, Mun Seok | - |
dc.date.accessioned | 2022-07-06T11:44:47Z | - |
dc.date.available | 2022-07-06T11:44:47Z | - |
dc.date.created | 2021-11-22 | - |
dc.date.issued | 2021-11 | - |
dc.identifier.issn | 2366-9608 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/140575 | - |
dc.description.abstract | 2D transition metal dichalcogenides (TMDs) exhibit intriguing properties for applications in optoelectronics and electronics, among which memtransistors received extensive attention as multifunctional devices. For practical applications of 2D TMDs, large-area fabrication of the materials via reliable processes, which is in trade-off with their quality, has been a long-standing issue. Here, a simple and effective way is proposed to fabricate large-area and high-quality molybdenum disulfide thin films using MoS2 colloidal ink through a spray coating, followed by a postsulfurization process. High-quality MoS2 thin films exhibit excellent optical and electrical properties that can be utilized in field-effect transistors (FETs) and memtransistor arrays. The MoS2 FETs show an average on/off ratio of 5 x 10(6) and a high electron mobility of 10.34 cm(2) V-1 s(-1), which can be understood by the healing of sulfur vacancies, recrystallization, and the removal of the carbon contamination of the MoS2. These MoS2-based memtransistors present stable operations with a high switching ratio tuned by back gate and light illumination, which is promising for multiple-levels memory and complex neuromorphic computing. This study demonstrates a new strategy to fabricate 2D TMDs with large-area and high quality for integrated optoelectronic and memory device applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Large-Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Mun Seok | - |
dc.identifier.doi | 10.1002/smtd.202100558 | - |
dc.identifier.scopusid | 2-s2.0-85114992240 | - |
dc.identifier.wosid | 000696726900001 | - |
dc.identifier.bibliographicCitation | SMALL METHODS, v.5, no.11, pp.1 - 9 | - |
dc.relation.isPartOf | SMALL METHODS | - |
dc.citation.title | SMALL METHODS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FEW-LAYER MOS2 | - |
dc.subject.keywordPlus | ATOMIC LAYERS | - |
dc.subject.keywordPlus | PHASE GROWTH | - |
dc.subject.keywordPlus | CVD GROWTH | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | WS2 | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordAuthor | colloidal syntheses | - |
dc.subject.keywordAuthor | high electron mobility | - |
dc.subject.keywordAuthor | large-area | - |
dc.subject.keywordAuthor | memtransistors | - |
dc.subject.keywordAuthor | molybdenum disulfide | - |
dc.subject.keywordAuthor | optoelectronics | - |
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