Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition
DC Field | Value | Language |
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dc.contributor.author | Jeong, Sang Ha | - |
dc.contributor.author | Thi Kim Oanh Vu | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2022-07-06T11:47:51Z | - |
dc.date.available | 2022-07-06T11:47:51Z | - |
dc.date.created | 2021-07-14 | - |
dc.date.issued | 2021-10 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/140626 | - |
dc.description.abstract | We studied Si-doped Ga2O3 photodetectors with a metal-semiconductor-metal structure that were fabricated using pulsed laser deposition and a post-annealing process under an oxygen atmosphere in a temperature range from 500 degrees C to 800 degrees C. After post-annealing, the Si-doped Ga2O3 photodetectors with 500 degrees C was showed the highest photoresponsivity (0.34 A/W) and external quantum efficiency (166.23%), while the device with 800 degrees C was exhibited the fastest switching speeds (0.88 s/0.18 s) for the on/off switching. These results are due to changes in the defect densities from the chemical bond formation between Si and O atoms. Our results show that post thermal annealing of Si-doped beta-Ga2O3 layers can modify the photo detector performance depending on applications for high photoresponsivity or fast response time. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1016/j.jallcom.2021.160291 | - |
dc.identifier.scopusid | 2-s2.0-85105721768 | - |
dc.identifier.wosid | 000660460500005 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.877, pp.1 - 6 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 877 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | BETA-GA2O3 THIN-FILMS | - |
dc.subject.keywordPlus | ULTRAVIOLET | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordAuthor | Ga2O3 | - |
dc.subject.keywordAuthor | PLD | - |
dc.subject.keywordAuthor | DUV photodetector | - |
dc.subject.keywordAuthor | Furnace annealing | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S092583882101700X?via%3Dihub | - |
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