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Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories (vol 9, pg 774, 2021)
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jun Gyu | - |
| dc.contributor.author | Jung, Woo Je | - |
| dc.contributor.author | Park, Jae Hyeon | - |
| dc.contributor.author | Yoo, Keon-Ho | - |
| dc.contributor.author | Kim, Tae Whan | - |
| dc.date.accessioned | 2022-07-06T14:35:37Z | - |
| dc.date.available | 2022-07-06T14:35:37Z | - |
| dc.date.created | 2021-11-22 | - |
| dc.date.issued | 2021-09 | - |
| dc.identifier.issn | 2168-6734 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/141137 | - |
| dc.description.abstract | In [1], the following sentence on p. 774, second column, is revised as follows. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories (vol 9, pg 774, 2021) | - |
| dc.title.alternative | Erratum: Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories (IEEE J. Electron Devices Soc. (2021) 9 (774–777) DOI: 10.1109/JEDS.2021.3104843) Erratum to “Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories” | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
| dc.identifier.doi | 10.1109/JEDS.2021.3109400 | - |
| dc.identifier.scopusid | 2-s2.0-85115973136 | - |
| dc.identifier.wosid | 000696068300002 | - |
| dc.identifier.bibliographicCitation | IEEE Journal of the Electron Devices Society, v.9, pp.813 - 813 | - |
| dc.relation.isPartOf | IEEE Journal of the Electron Devices Society | - |
| dc.citation.title | IEEE Journal of the Electron Devices Society | - |
| dc.citation.volume | 9 | - |
| dc.citation.startPage | 813 | - |
| dc.citation.endPage | 813 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Correction | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordAuthor | Flash memories | - |
| dc.subject.keywordAuthor | Electron devices | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/9537818 | - |
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