Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Yoobeen | - |
dc.contributor.author | Jung, Jin Won | - |
dc.contributor.author | Lee, Jin Seok | - |
dc.date.accessioned | 2022-07-06T20:36:28Z | - |
dc.date.available | 2022-07-06T20:36:28Z | - |
dc.date.created | 2021-07-14 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.issn | 2052-1537 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/141979 | - |
dc.description.abstract | The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the underlying reaction mechanisms is also needed. In this work, we present a new sulfurization process of tungsten (W) film using a sulfur (S)-containing organic precursor for the growth of WS2 films on SiO2/Si substrates. The W film was deposited with precise layer thickness control by atomic layer deposition and uniformly sulfurized using diethyl sulfide (DES) as S precursor. Comprehensive optical and chemical analyses revealed that by using DES as S precursor, the S atoms were uniformly supplied, and sulfurization occurred accurately and delicately. Moreover, the WS2 film synthesized using DES showed outstanding electrical conductivity (similar to 37 mS cm(-1)), which was almost 17 times higher than that of the WS2 film synthesized using S powder. Based on the results of optical, electrical, and chemical analyses, we proposed and validated a hypothesis to explain the sulfurization mechanism. The fabricated TMDC materials using the method presented in this work show great potential for industrial application due to their highly uniform surface and improved electrical conductivity. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jin Seok | - |
dc.identifier.doi | 10.1039/d1qm00173f | - |
dc.identifier.scopusid | 2-s2.0-85105443825 | - |
dc.identifier.wosid | 000634893500001 | - |
dc.identifier.bibliographicCitation | MATERIALS CHEMISTRY FRONTIERS, v.5, no.9, pp.3692 - 3698 | - |
dc.relation.isPartOf | MATERIALS CHEMISTRY FRONTIERS | - |
dc.citation.title | MATERIALS CHEMISTRY FRONTIERS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 3692 | - |
dc.citation.endPage | 3698 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Electric conductivity | - |
dc.subject.keywordPlus | Film growth | - |
dc.subject.keywordPlus | Grain boundaries | - |
dc.subject.keywordPlus | Silica | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Sulfur compounds | - |
dc.subject.keywordPlus | Transition metals | - |
dc.subject.keywordPlus | Tungsten compounds | - |
dc.subject.keywordPlus | Electrical conductivity | - |
dc.subject.keywordPlus | Electroconductive | - |
dc.subject.keywordPlus | Electronic systems | - |
dc.subject.keywordPlus | Intrinsic defects | - |
dc.subject.keywordPlus | Organic precursor | - |
dc.subject.keywordPlus | Reaction mechanism | - |
dc.subject.keywordPlus | Transition metal dichalcogenides | - |
dc.subject.keywordPlus | Tungsten (w) | - |
dc.subject.keywordPlus | Chemical analysis | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2021/QM/D1QM00173F | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.