Selective patterning of out-of-plane piezoelectricity in MoTe2 via focused ion beam
- Authors
- Seol, Daehee; Kim, Songkil; Jang, Woo-Sung; Jin, Yeongrok; Kang, Seunghun; Kim, Sera; Won, Dongyeun; Lee, Chanwoo; Kim, Young-Min; Lee, Jaekwang; Yang, Heejun; Jeong, Mun Seok; Belianinov, Alex; Tselev, Alexander; Somnath, Suhas; Smith, Christopher R.; Ovchinnikova, Olga S.; Balke, Nina; Kim, Yunseok
- Issue Date
- Jan-2021
- Publisher
- ELSEVIER
- Keywords
- Defect formation; Inversion symmetry breaking; Ion beam irradiation; Out-of-plane piezoelectricity; Transition-metal dichalcogenides
- Citation
- NANO ENERGY, v.79, pp.1 - 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO ENERGY
- Volume
- 79
- Start Page
- 1
- End Page
- 9
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/142454
- DOI
- 10.1016/j.nanoen.2020.105451
- ISSN
- 2211-2855
- Abstract
- Two-dimensional transition-metal dichalcogenides (TMDs) have a strain-sensitive nature and can only exhibit in plane piezoelectricity, owing to their in-plane inversion symmetry breaking, which limits their practical applications for vertical stimulations. In this study, we demonstrated the capability of focused ion beams to create out of-plane piezoelectricity on multi-layered MoTe2. We utilized a focused helium ion beam to selectively pattern the out-of-plane piezoelectricity via defect engineering in a layered MoTe2 flake. The generated out-of-plane piezoelectricity in the desired area was quantitatively examined using atomic force microscopy, and ion beam irradiation-induced defect formation that gave rise to inversion symmetry breaking was confirmed. These results indicated that the out-of-plane piezoelectricity can be selectively patterned through a focused helium ion beam, and it is expected that this approach can also be applied to other classes of TMDs and can expand the application fields of TMD-based devices.
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