Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure
DC Field | Value | Language |
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dc.contributor.author | Jeong, Hyun | - |
dc.contributor.author | Bang, Seungho | - |
dc.contributor.author | Oh, Hye Min | - |
dc.contributor.author | Jeong, Hyeon Jun | - |
dc.contributor.author | An, Sung-Jin | - |
dc.contributor.author | Han, Gang Hee | - |
dc.contributor.author | Kim, Hyun | - |
dc.contributor.author | Kim, Ki Kang | - |
dc.contributor.author | Park, Jin Cheol | - |
dc.contributor.author | Jeong, Mun Seok | - |
dc.date.accessioned | 2022-07-07T04:02:27Z | - |
dc.date.available | 2022-07-07T04:02:27Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2015-10 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/142910 | - |
dc.description.abstract | We propose a semiconductor insulator semiconductor (SIS) heterojunction diode consisting of monolayer (1-L) MoS2, hexagonal boron nitride (h-RN), and epitaxial p-GaN that can be applied to high-performance nanoscale optoelectronics. The layered materials of 1-L MoS2 and h-BN, grown by chemical vapor deposition, were vertically stacked by a wet-transfer method on a p-GaN layer. The final structure was verified by confocal photoluminescence and Raman spectroscopy. Current voltage (I-V) measurements were conducted to compare the device performance with that of a more classical p-n structure. In both structures (the p-n and SIS heterojunction diode), clear current-rectifying characteristics were observed. In particular, a current and threshold voltage were obtained for the SIS structure that was higher compared to that of the p-n structure. This indicated that tunneling is the predominant carrier transport mechanism. In addition, the photoresponse of the SIS structure induced by the illumination of visible light was observed by photocurrent measurements. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Mun Seok | - |
dc.identifier.doi | 10.1021/acsnano.5b04233 | - |
dc.identifier.scopusid | 2-s2.0-84945928514 | - |
dc.identifier.wosid | 000363915300059 | - |
dc.identifier.bibliographicCitation | ACS NANO, v.9, no.10, pp.10032 - 10038 | - |
dc.relation.isPartOf | ACS NANO | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 9 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 10032 | - |
dc.citation.endPage | 10038 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary | - |
dc.subject.keywordAuthor | carrier tunneling | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | h-BN | - |
dc.subject.keywordAuthor | monolayer MoS2 | - |
dc.subject.keywordAuthor | semiconductor-insulator-semiconductor diode | - |
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