Cited 5 time in
Giant spin-orbit-induced spin splitting in Bi zigzag chains on GaAs(110)
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hyun-Jung | - |
| dc.contributor.author | Cho, Jun-Hyung | - |
| dc.date.accessioned | 2022-07-07T04:14:03Z | - |
| dc.date.available | 2022-07-07T04:14:03Z | - |
| dc.date.issued | 2015-08 | - |
| dc.identifier.issn | 2469-9950 | - |
| dc.identifier.issn | 2469-9969 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/142941 | - |
| dc.description.abstract | The search for one-dimensional electron systems with a giant Rashba-type spin splitting is of importance for the application of spin transport. Here we report, based on a first-principles density-functional-theory calculation, that Bi zigzag chains formed on a heterogeneous GaAs(110) surface have a giant spin splitting of surface states. This giant spin splitting is revealed to originate from spin-orbit coupling (SOC) and electric dipole interaction that are significantly enhanced by (i) the asymmetric surface charge distribution due to the strong SOC-induced hybridization of the Bi p(x), p(y), and p(z) orbitals and (ii) the large out-of-plane and in-plane potential gradients generated by two geometrically and electronically inequivalent Bi atoms bonding to Ga and As atoms. The results demonstrate an important implication of the in-plane and out-of-plane asymmetry of the Bi/GaAs(110) interface system in producing the giant spin splitting with the in-plane and out-of-plane spin components. | - |
| dc.format.extent | 6 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AMER PHYSICAL SOC | - |
| dc.title | Giant spin-orbit-induced spin splitting in Bi zigzag chains on GaAs(110) | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1103/PhysRevB.92.085303 | - |
| dc.identifier.scopusid | 2-s2.0-84940062181 | - |
| dc.identifier.wosid | 000359344700013 | - |
| dc.identifier.bibliographicCitation | Physical Review B, v.92, no.8, pp 1 - 6 | - |
| dc.citation.title | Physical Review B | - |
| dc.citation.volume | 92 | - |
| dc.citation.number | 8 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 6 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | INVERSE-PHOTOEMISSION | - |
| dc.subject.keywordPlus | SURFACE-STATES | - |
| dc.subject.keywordPlus | INTERFACE | - |
| dc.subject.keywordPlus | BI/GAAS(110) | - |
| dc.subject.keywordPlus | SPECTROSCOPY | - |
| dc.subject.keywordPlus | METALS | - |
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