Structural and optical properties of MoS2 layers grown by successive two-step chemical vapor deposition method
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Qiu, Dongri | - |
dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Pak, Sang Woo | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2022-07-07T04:19:30Z | - |
dc.date.available | 2022-07-07T04:19:30Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-07 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/142960 | - |
dc.description.abstract | We have studied a successive two-step chemical vapor deposition (CVD) method to prepare large-scale MoS2 thin films using a horizontal hot wall furnace. The CVD growth was followed by evaporation of the MoO3 precursor on similar to 2.5 x 2.5 cm(2) SiO2/Si substrates in the first step and a temperature ramp for sulfurization as a second step. Synthesized films were systematically analyzed by various structural and optical measurements. Crystallinity of the synthesized MoS2 tri-layer films exhibited a typical 2H-MoS2 structure and uniformly covered the whole substrate. MoS2 field effect transistors were fabricated by using the obtained CVD-MoS2, and these showed n-type behavior with an on/off ratio of about 10(3). (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Structural and optical properties of MoS2 layers grown by successive two-step chemical vapor deposition method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1016/j.tsf.2015.01.036 | - |
dc.identifier.scopusid | 2-s2.0-84929285067 | - |
dc.identifier.wosid | 000354118100010 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.587, pp.47 - 51 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 587 | - |
dc.citation.startPage | 47 | - |
dc.citation.endPage | 51 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | ATOMIC LAYERS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | UNIFORM | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | Molybdenum disulfide | - |
dc.subject.keywordAuthor | Chemical vapor deposition | - |
dc.subject.keywordAuthor | Field effect transistor | - |
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