Electrical and Optical Characteristics of n-ZnO/p-GaN Hetero-Junction Diode Fabricated by Ultra-High Vacuum Sputter
- Authors
- Cho, Seong Gook; Lee, Dong Uk; Kim, Eun Kyu
- Issue Date
- Sep-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- ZnO; GaN; Heterojunction Diode; Ultra-High Vacuum Sputter
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.9, pp.6443 - 6446
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 13
- Number
- 9
- Start Page
- 6443
- End Page
- 6446
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143685
- DOI
- 10.1166/jnn.2013.7619
- ISSN
- 1533-4880
- Abstract
- We investigated the electrical and optical properties of n-ZnO/p-GaN hetero-junction diode fabricated by an ultra-high vacuum radio frequency magnetron sputter. A physical relationship between the rotation rate during deposition process and post annealing conditions after deposited ZnO layer on p-GaN layer was discussed. When the rotation rates during deposition process of n-ZnO layer were 5 rpm and 15 rpm, the full width at half maximum of photoluminescence spectra of ZnO layer on the p-GaN layer was about 106 and 133 meV, respectively. Also, the ratio of deep level emission to near band edge emission was dramatically increased as increasing the rotation rate from 5 to 15 rpm. The n-ZnO/p-GaN hetero-junction diode grown at 5 rpm has a higher ratio of forward to reverse currents than the diode grown at 15 rpm. Also, the 600 degrees C-annealed diodes with 5 rpm showed good rectifying behavior with the barrier height of 0.74 eV, the ideality factor of 12.2, and the forward to reverse current ratio of 614 at +/- 8 V.
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