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Influence of the direction of spontaneous orientation polarization on the charge injection properties of organic light-emitting diodes

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dc.contributor.authorNoguchi, Yutaka-
dc.contributor.authorLim, Hyunsoo-
dc.contributor.authorIsoshima, Takashi-
dc.contributor.authorIto, Eisuke-
dc.contributor.authorHara, Masahiko-
dc.contributor.authorChin, Whee Won-
dc.contributor.authorHan, Jin Wook-
dc.contributor.authorKinjo, Hiroumi-
dc.contributor.authorOzawa, Yusuke-
dc.contributor.authorNakayama, Yasuo-
dc.contributor.authorIshii, Hisao-
dc.date.accessioned2022-07-07T06:41:15Z-
dc.date.available2022-07-07T06:41:15Z-
dc.date.issued2013-05-
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143736-
dc.description.abstractA tris(7-propyl-8-hydroxyquinolinato) aluminum [Al(7-Prq)(3)] film shows negative giant surface potential (GSP) because of spontaneous orientation polarization. The polarity of this film is opposite to those of tris-(8-hydroxyquinolate) aluminum films. In Al(7-Prq)(3)-based organic light-emitting diodes, negative GSP leads to the positive interface charge and governs the electron injection and accumulation properties. In addition, a high resistance to the electron injection at the Al(7-Prq)(3)/Ca interface is suggested possibly because of the negative polarization charge at the interface. These results show the importance of orientation polarization in controlling the charge injection and accumulation properties and potential profile of the resultant devices.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Institute of Physics-
dc.titleInfluence of the direction of spontaneous orientation polarization on the charge injection properties of organic light-emitting diodes-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1063/1.4807797-
dc.identifier.scopusid2-s2.0-84878357927-
dc.identifier.wosid000320619300085-
dc.identifier.bibliographicCitationApplied Physics Letters, v.102, no.20, pp 1 - 5-
dc.citation.titleApplied Physics Letters-
dc.citation.volume102-
dc.citation.number20-
dc.citation.startPage1-
dc.citation.endPage5-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusELECTRONIC-STRUCTURES-
dc.subject.keywordPlusMETAL-
dc.subject.keywordPlusACCUMULATION-
dc.subject.keywordPlusBEHAVIOR-
dc.subject.keywordPlusALQ(3)-
dc.subject.keywordPlusDEVICE-
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.4807797-
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